Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide colorgamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms,such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its highermobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons passthrough the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL),resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on allsolution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigateHTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmedto effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness alsoensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achievedin the all-solution-processed inverted InP QD-LEDs with the EBL.