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Abstract 13
1. 서론 16
2. 이론적 배경 22
2.1. 투명전극의 종류 22
2.2. Indium Free 투명전극의 필요성 24
2.3. 유기 발광 다이오드(OLED) 27
2.3.1. OLED의 구조 및 발광원리 27
2.3.2. OLED의 분류 31
3. 실험 37
장비 37
3.1. Aedotron™ C를 이용한 박막 제작실험 37
3.1.1. Aedotron™ C의 용매저항성 실험 40
3.1.2. Aedotron™ C의 Spin coating 속도에 따른 두께 및 광 투과도 측정실험 40
3.2. ATO를 이용한 박막 제작실험 41
3.2.1. ATO의 용매저항성 실험 42
3.2.2. ATO의 spin coating 속도 / Coating 횟수에 따른 두께 및 광 투과도 측정실험 42
3.2.3. ATO 두께 및 소결 온도에 따른 면저항 측정실험 43
3.3. 소자 제조공정 43
3.3.1. ITO 전극 패터닝 43
3.3.2. ATO 전극 패터닝 46
3.3.3. 고분자 coating, 전극층 증착 및 봉지공정 47
3.3.4. PEDOT:PSS 유무에 따른 소자 제작 49
3.3.5. Aedotron™ C 적용 소자의 구조 최적화 실험 49
3.3.6. ATO 투명전극 적용 소자구조 최적화 실험 49
3.3.7. ATO 전극에서의 새로운 HIL/HTL 구조 적용 및 최적화 실험 49
4. 결과 및 고찰 50
4.1. Aedotron™ C의 박막특성평가 50
4.1.1. Aedotron™ C의 용매저항성 특성평가 50
4.1.2. Aedotron™ C의 Spin coating 속도에 따른 두께 및 광 투과도 특성평가 53
4.2. ATO를 이용한 박막 특성평가 57
4.2.1. ATO의 용매저항성 특성평가 57
4.2.2. ATO의 spin coating 속도 / Coating 횟수에 따른 두께 및 광 투과도 특성평가 60
4.2.3. ATO 소결 온도에 따른 면저항 특성평가 64
4.3. 소자 특성평가 65
4.3.1. PEDOT:PSS 유무에 따른 소자 특성평가 65
4.3.2. AedotronTM C 적용 소자 특성평가 71
4.3.3. ATO 투명전극 적용 소자 특성평가 81
4.3.4. ATO 투명전극 및 Aedotron™ C 적용 소자 특성평가 89
5. 결론 95
Reference 97
감사의 글 99
Table 1. Structures of fabricated PLED devices. 20
Table 2. Display type, and the required characteristics for the purpose. 23
Table 3. Diagnostication of problems of indium supply and demand 25
Table 4. Compare the structure of OLED and PLED 32
Table 5. Fabrication conditions of devices 48
Table 6. Thickness of Aedotron™ C thin films by spin coatiog speed. 54
Table 7. Transmittance of Aedotron™ C by thickness. 56
Table 8. Thickness of ATO thin films by spin coatiog speed. 61
Table 9. Thickness of Transmittance of ATO by spin coatiog times. 62
Table 10. Sheet resistance of various annealing temperature and thickness. 64
Table 11. Characterization of device I and II 68
Table 12. Characterization of device III, IV and V 75
Table 13. Sheet resistance of various annealing temperature and thickness. 81
Table 14. Characterization of device IV 84
Table 15. Characterization of device VI and VII 92
Fig.1. Structure of PLEDs in this study. 21
Fig.2. Patterned ATO glass and fabricated device. 21
Fig.3. Diagram of indum supply and demand 25
Fig.4. The market prospects for ITO target and thin for transparent electrodes. 26
Fig.5. Emitting mechanism of multi layer OLED 28
Fig.6. Molecular structure of PEDOT:PSS 29
Fig.7. Molecular structure of CuPc 29
Fig.8. Molecular structure of NPB 30
Fig.9. Mechanism of carrier injection and transportation 30
Fig.10. The formation of excitons by recombination of hole and electron. 31
Fig.11. Molecule structures of small molecule emitting materials for OLED 33
Fig.12. Molecule structures of poly(p-phenylene vinylene, PPV) derivatives of emitting materials for PLED. 34
Fig.13. Molecule structures of poly(fluorene, PF) derivatives of emitting materials for PLED. 35
Fig.14. Structures of PMOLED and AMOLED 36
Fig.15. Molecule structures of Aedotron™ C 38
Fig.16. Cyclic voltammogram of Aedotron™ C 39
Fig.17. TEM image of ATO thin film 41
Fig.18. Patterned shadow mask 45
Fig.19. Patterned ATO glass 46
Fig.20. Absorption spectrums of before/after DI water rinsing. 51
Fig.21. Absorption spectrums of before/after chlorobenzene rising 51
Fig.22. Absorption spectrums of before/after xylene rining. 52
Fig.23. Absorption spectrums of before/after chloride rinsing 52
Fig.24. Absorption spectrums of before/after chloroform rinsing 53
Fig.25. Thickness of Aedotron™ C thin films by spin coatiog speed. 54
Fig.26. Transmittance of Aedotron™ C by thickness. 55
Fig.27. Absorption spectrums of before/after DI water rinsing. 58
Fig.28. Absorption spectrums of before/after chlorobenzene rising 58
Fig.29. Absorption spectrums of before/after chloride rinsing 59
Fig.30. Absorption spectrums of before/after chloroform rinsing 59
Fig.31. Thickness of ATO thin films by spin coatiog speed. 61
Fig.32. Thickness of ATO by spin coatiog times. 62
Fig.33. Transmittance of ATO by spin coating times and thickness. 63
Fig.34. Bringtness-Voltage graphs of device I and II 66
Fig.35. Efficiency-Bringtness graphs of device I and II 66
Fig.36. Bringtness-Current graphs of device I and II 67
Fig.37. EL spectrums of device I and II 67
Fig.38. CIE coordinates of device I and II 68
Fig.39. Energy band diagrams of device I and II 69
Fig.40. AFM images of device I and II 70
Fig.41. Brightness-Voltage graph of device III, IV and V, Insert, in order to compare device II and V 72
Fig.42. Efficiency-Bringtness graphs of device III, IV and V Insert, in order to compare device II and V 73
Fig.43. Bringtness-Current density graph of device III, IV and V 74
Fig.44. EL spectrum of device III, IV and V 74
Fig.45. CIE coordinate of device III, IV and V 75
Fig.46. Energy band diagrams of device III, IV and V 77
Fig.47. AFM images of device III, IV and V 80
Fig.48. Brightness-Voltage graph of device VI 82
Fig.49. Efficiency-Bringtness graphs of device VI 82
Fig.50. Bringtness-Current density graph of device IV 83
Fig.51. EL spectrum of device IV 83
Fig.52. CIE coordinate of device IV 84
Fig.53. Pictures of light-emitting ATO transparent elctrode PLED 85
Fig.54. Enegy band diagrams of device VI 87
Fig.55. Transmission electron microscopy(TEM) image of ATO thin film 87
Fig.56. AFM images of ATO surface morphology(RMS : 6.63nm) 88
Fig.57. Brightness-Voltage graph of device VI and VII 90
Fig.58. Efficiency-Voltage graphs of device VI and VII 90
Fig.59. Bringtness-Current density graph of device VI and VII 91
Fig.60. EL spectrum of device VI and VII 91
Fig.61. CIE coordinate of device VI and VII 92
Fig.62. Energy band diagrams of device VI and VII 93
Fig.63. AFM image of ATO/Aedotron™ C surface morphology(RMS : 30.74nm) 94
Fig.64. AFM image of ATO/Aedotron™ C/PEDOT:PSS surface morphology(RMS : 24.45nm) 94
List of Formula
Formula 1. Calculation of HOMO/LUMO levels 39
초록보기 더보기
Transparent conducting oxide(TCO) is an essential part of technologies that require both large area electrical contact and optical access in the visible region. Among them, indium tin oxide(ITO) is one of the most widely used transparent electrode for organic light emitting diodes(OLEDs), organic photovoltaic cells(OPVs), organic thin film transistors(OTFTs) and other solid state applications. Some of the problems encountered with ITO are a large surface roughness, and an oxidative destruction at the overlying emissive polymer interface. To counter the above issues, intermediate polymer layers have been considered such as polyaniline emeraldine or poly(3,4-ethylenedioxythiophene) blended with poly(styrene sulfonate)(PEDOT:PSS). PEDOT:PSS is the conventional hole transport layer, because it provides a reproducible work function, can be cast to give a smooth interface, and hinders oxidation at the emissive interface. Unfortunately, PEDOT:PSS is itself corrosive at the ITO interface due to PSS has a strong acidic functional group.
In this study, perchlorate doped poly(3,4-ehylene dioxythiophene)-co- poly(ethyleneglycol)(PEDOT-PEG, AedotronTM C) was introduced as a hole injection layer in PLED. AedotronTM C layer, HOMO and LUMO level was -4.28eV, -3.54eV, was laid between ITO and PEDOT:PSS. This interlayer prevented corrosion of the ITO transparent electrode by PSS and was acted as an efficient electron blocking layer. Consequently, maximum brightness was increased about 33% and the stability of the device was improved.
And than, a PLED device was fabricated by using the wet processable antimony tin oxide(ATO) as the transparent electrode and electrical and optical properties ware measured. Transmittance of ATO thin film was more than 90% in the visible region, sheet resistance was 30 ohm/sq , and had a strong solvent resistance.
Similarly, AedotronTM C was applied to the ATO device as an HIL, the maximum brightness was increased about 34% and the stability of the device was also improved.
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