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Title Page
Contents
ABSTRACT 5
1. INTRODUCTION 6
2. THEORETICAL BACKGROUND 8
2.1. Aerosol deposition method (ADM) 8
2.2. Nano particle deposition system (NPDS) 12
2.3. Powder deposition mechanism 15
2.4. Potential application of NPDS. 17
2.5. Conventional experimental results of NPDS 19
2.6. Micronozzle-integrated NPDS 23
2.7. Preliminary study on Bosch process for micronozzle fabrication 25
3. EXPERIMENTAL PROCEDURES 33
3.1. Micronozzle fabrication 33
3.2. Powder preparation 36
3.3. Heat treatment and film characteristics measurement 40
4. RESULTS AND DISCUSSIONS 43
4.1. Micronozzle fabrication 43
4.2. Al₂O₃ powder deposition 45
4.3. Characterization of Al₂O₃ layer deposition 49
4.4. Heat treatment and adhesion test 54
4.5. Cross-sectional characterization of Al₂O₃ layer deposition 57
5. CONCLUSIONS 61
6. REFERENCES 62
국문 요지 64
감사의 글 65
Table 2.1: Parameter conditions for Bosch process 27
Table 3.1: Etching parameters. 35
Table 3.2: NPDS deposition process conditions 37
Table 3.3: Hardness measurement of substrates with Al₂O₃ powder deposition. 42
Fig. 2.1: Configuration of the aerosol deposition equipment. 10
Fig. 2.2: Illustration of Al₂O₃ film formation mechanism in the aerosol deposition method in the case of (a) room temperature conditions, and (b) higher temperatures [16] : (1) particle; (2) substrate; (3) particle deposited before. The time line is given. 11
Fig. 2.3: Particle velocity and diameter range of various powder deposition methods. 13
Fig. 2.4: Schematics of NPDS [11]. 14
Fig. 2.5: Micropatterning principle of NPDS. 16
Fig. 2.6: Potential application of NPDS. 18
Fig. 2.7: TiO₂ nanopowder deposition on AlSI304 stainless steel. (a) Surface image taken by scanning electronic microscope (SEM). (b) The cross-sectional image taken by SEM. 20
Fig. 2.8: (a) The SEM image of Al₂O₃ powders (before deposition). (b) The SEM image of the surface of deposited Al₂O₃ area (after deposition). 22
Fig. 2.9: Fabrication of micronozzles using semiconductor technologies [17, 18, 19]. 24
Fig. 2.10: SEM images of the cross-sectional area of Si trenches as the duty cycle and width change. 28
Fig. 2.11: Relation between the etch rate and duty cycle with changes in nominal width. 29
Fig. 2.12: Relationship between the etch rate and aspect ratio of trenches with various duty cycles. 30
Fig. 2.13: Relationship between the duty cycle and undercut as the nominal width changes. 31
Fig. 2.14: Relationship between the bowing effect and duty cycle as the nominal width changes. 32
Fig. 3.1: Micronozzle fabrication process flow chart. nozzle: (a) Wafer preparation; (b) Photoresist patterning; (c); (c) Isotropic etching; (d) Deep reactive ion etching; (e) Photoresist stripping; (f) Back-side alignment and Photoresist patterning; (g) Isotropic etching; (h) Deep reactive ion etching; (i) Stripping of photoresist and... 34
Fig. 3.1: SEM image of a-Al₂O₃ powder. 38
Fig. 3.2: X-ray diffraction pattern Al₂O₃ powder. The peak indicates that the type is a- Al₂O₃ (the reference peak of a-Al₂O₃ is shown below the measured peak). 39
Fig. 3.2: Annealing temperature profile. 41
Fig. 4.1: Optical image of micronozzle: (a) Schematic showing the difference between the original pattern and the actual etching of the nozzle. (b) Optical image of the fabricated micro-nozzle. (c) Schematic of cross-sectional view for micronozzle across A-A' line in the optical image. 44
Fig. 4.2: Optical images of heat-treated Al₂O₃ layers deposited on various substrates: (a) Si substrate with 0 s ultrasonic treatment; (b) Si substrate with 2 s ultrasonic treatment; (c) Si substrate with 7 s ultrasonic treatment; (d) Al substrate with 0 s ultrasonic treatment; (e) Al substrate with 2 s ultrasonic treatment; (f) Al substrate... 47
Fig. 4.3: Fluid behavior at the nozzle tip [21]. The carrier moves directly towards the substrate when the Stokes number is greater than 1. 48
Fig. 4.4: Image of Al₂O₃ powder deposition on Cu substrate observed by SEM. (a) Overall image. (b) Al₂O₃ powder deposition layer (the investigated area is designated in (a)) Powders were densely deposited. (c) Highly magnified Al₂O₃ powder image showing that the deposited Al₂O₃ layer is melted (the investigated... 51
Fig. 4.5: Image of Al₂O₃ powder deposition on Al substrate observed by SEM. (a) Overall image. (b) Al₂O₃ powder deposition layer (the investigated area is designated in (a)). Powders were densely deposited. (c) Highly magnified Al₂O₃ powder image (the investigated area is designated in (b)). (d) Highly magnified... 52
Fig. 4.6: Image of Al₂O₃ powder deposition on Si substrate observed by SEM. (a) Overall image. (b) Al₂O₃ powder deposition layer (the investigated area is designated in (a)). (c) Highly magnified Al₂O₃ powder image (the investigated area is designated in (a)). (e) Highly magnified melted Al₂O₃ powder image (the investigated... 53
Fig. 4.7: The thickness of remaining Al₂O₃ powders on various substrates after different ultrasonic treatments. 56
Fig. 4.8: (a) Cross-sectional view of the Al₂O₃ powder pattern deposited on the Cu substrate. EDX analysis position was designated on the image. (b) Al peak detection result on the designated line. (c) Cu peak detection result on the designated line. (d) Oxygen peak detection result on the dotted line. (e) Highly magnified cross-sectional... 58
Fig. 4.9: (a) Cross-sectional view of the Al₂O₃ powder pattern deposited on the Al substrate. EDX analysis position was designated on the image. (b) Al peak detection result on the dotted line. (c) Oxygen peak detection result on the designated line. (d) Highly magnified cross-sectional image. The magnified location is indicated in (a). 59
Fig. 4.10: (a) Cross-sectional view of the Al₂O₃ powder pattern deposited on the Cu substrate. EDX analysis position was designated on the image. (b) Al peak detection result on the designated line. (c) Si peak detection result on the designated line. (d) Oxygen peak detection result on the dotted line. (e) Highly magnified cross-sectional... 60
초록보기 더보기
약 100nm 의 크기를 갖는 알루미나 분말을 알루미늄, 구리, 실리콘 기판에 분사 적층실험을 실시하였다. 이 실험에서 사용한 나노입자적층시스템(Nano-particle deposition system, NPDS)은 마이크로노즐을 통해 알루미나 분말을 고속으로 가속시켜 적층시키는 장비이다. 분사된 알루미나 분말 패턴을 열처리한 뒤 증착된 패턴을 분석하였다. 노즐 부근에서는 입자들의 운동은 스토크스 모델을 따르게 되는데, 스토크스 수가 1 이상일 경우 입자들이 주위의 영향을 받지 않고 직선적인 운동을 하게 된다. 한편 상온에서 세라믹 분말은 고속으로 가속된 입자가 기판에 충돌할 때 받는 충격량에 의해 부서지면서 기판에 적층되는 것으로 알려져 있다. 또한 따라서 적층될 때 기판의 경도에도 영향을 받게 된다. 본 실험을 실시한 결과, 각 기판에 분사한 알루미나 분말의 적층두께가 달라지는 것을 확인할 수 있었다. 특히 단결정 실리콘 웨이퍼 기판에서 가장 높은 적층두께를 나타내었다. 이러한 현상은 기판의 경도와 녹는점에 영향을 받는 것으로 보인다. 분말입자들은 높은 운동에너지를 갖고 있어서 표면이 단단한 기판과 충돌할 경우 부서지게 된다. 또한 기판의 녹는점도 주요한 변수인데, 이것은 분말입자들이 비탄성충돌을 일으키면서 갖고 있던 에너지를 열에너지로 전환시켜 주위로 방출하기 때문이다. 실제로, 알루미늄은 구리 기판보다 낮은 녹는점을 갖고 있어서 구리보다 더 적층이 잘 이루어지는 것으로 보인다. 따라서 분말 적층시에 기판의 경도와 녹는점이 주요 영향 변수로 작용하는 것으로 판단된다.
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