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제1장. 서론 9
제1절. 태양전지의 역사 9
제2절. 실리콘 태양전지의 동작원리 11
제3절. 태양전지의 구분과 종류 13
1. 결정질 실리콘 태양전지 13
2. 결정형 실리콘 태양전지의 종류 16
3. 상업용 태양전지 20
제4절. 태양전지의 손실 23
제5절. 연구동기 25
제2장. 매몰접촉형 태양전지 단위공정 26
제1절. 텍스쳐링(Texturing) 28
제2절. 확산 30
제3절. 절연막 형성 33
제4절. 전면 홈 생성 34
제5절. 과도핑 35
제6절. 인-실리케이트 유리층 제거 36
제7절. 스크린인쇄법을 이용한 후면 전극 형성 38
제8절. Ni 무전해도금 / Cu 전해도금 39
1. Ni 무전해도금 (Ni electroless plating) 39
2. Cu 전해도금 (Cu electroplating) 42
제3장. 실험방법 44
제1절. 세척 44
제2절. 확산 및 에칭 46
제3절. 절연층 형성 48
제4절. 매몰전극용 홈 형성 50
제5절. 니켈 무전해도금 및 구리도금 53
제6절. 오옴접합 형성 56
제7절. 효율측정 56
제4장. 실험결과 및 고찰 58
제1절. 텍스쳐링 및 확산 58
제2절. 절연층 형성 60
제3절. 매몰전극용 홈 형성 66
제4절. 니켈무전해도금 및 구리도금 68
제5절. 오옴접합형성 74
제6절. 매몰접촉형과 스크린인쇄 태양전지 76
제5장. 결론 81
참고문헌 82
ABSTRACT 85
Table 1. Annual solar cell development result. 10
Table 2. Refractive index for various materials. 34
Table 3. Properties of SiO₂ and Si₃N₄ at 300K. 37
Table 4. Solution for electroless Ni plating 42
Table 5. Sputter condition for SiNx insulating film.(이미지참조) 49
Table 6. Cu plating solution. 54
Table 7. Variation of properties of SPSC with Texturing and SiN thickness. 80
Fig 1. Principle and schematic diagram of solar cell. 12
Fig 2. Types of solar cells. 15
Fig 3. Annual solar cell efficiency graph[NREL]. 15
Fig 4. Schematic diagram of PESC. 17
Fig 5. Schematic diagram of PERC. 17
Fig 6. Schematic diagram of PERL. 19
Fig 7. Schematic diagram of IBC. 19
Fig 8. Schematic diagram of SPSC. 22
Fig 9. Schematic diagram of BCSC. 22
Fig 10. Flow chart of BCSC manufacturing process 27
Fig 11. Light path of textured substrate. 29
Fig 12. Diffusivity of selected impurities in silicon versus temperature. 32
Fig 13. Schematic diagram of tube furnace for doping phosphorus. 32
Fig 14. Schematic diagram of dicing blade. 35
Fig 15. Schematic diagram of Si cell with grooves doped heavily. 36
Fig 16. Variation of reactions in the paste printed on the surface with temperature. 39
Fig 17. Cu electroplating and Edge isolation. 43
Fig 18. Temperature profile and 800℃, 890℃ flow condition for phosphorous doping. 47
Fig 19. Mechanical scribing equipment used in this study. 51
Fig 20. Schematic diagram of scribing equipment. 52
Fig 21. Schematic diagram of Cu electroplating. 55
Fig 22. SEM photograph of textured Si substrate surface (a) top view, (b) side view. 59
Fig 23. Variation of refractive index of SiN with Nitrogen flow rate. 61
Fig 24. Variation of refractive index of SiN with Power. 61
Fig 25. Variation of refractive index of SiN with pressure. 63
Fig 26. Variation of Etch rate the SiN thin film with Nitrogen flow rate. 63
Fig 27. Essential Macleod simulation result for the optimal thickness of SiNx ARC film (λ=632.8 nm)(이미지참조) 65
Fig 28. Shape of BCSC after scribing on the SiNx-deposited Si wafer.(이미지참조) 67
Fig 29. Shape of groove observed by 3-D optical microscope. 67
Fig 30. SEM morphology of Ni and Cu layer deposited at groove. 69
Fig 31. EPMA of Ni and Cu atoms deposited near groove. 69
Fig 32. Morphology of Cu electrode filled in groove. 70
Fig 33. Cross sectional SEM image of Cu electrode filled in groove. 70
Fig 34. Cross sectional EPMA line scanning image. 72
Fig 35. SEM image and EPMA images for Si, Cl, Cu, Ni and P of the cell. 73
Fig 36. Variation of resistance of Ni with spacing and annealing time. 75
Fig 37. Variation of resistance of Al with spacing and annealing time. 75
Fig 38. I-V Curve of SPSC in Table 7(No. 1). 78
Fig 39. I-V Curve of SPSC in Table 7(No. 3). 78
Fig 40. I-V Curve of Buried Contact Solar Cell(No. 5). 79
초록보기 더보기
Due to larger shadowing area, higher contact resistivity and intrinsic resistivity of Ag electrode, there is a limitation in conversion efficiency of screen printed solar cell. In order to solve the problem, buried contact solar cell was tried and its individual process was investigated.
P-type Si wafer was successfully scribed by the home-made mechanical scriber which was compoosed of HDD 3 phase synchronous motor, 3-axis LM guide, phase shifter, audio amplifier, Labview, signal generator and etc. SiNx insulating films with a refraction index of 2.02 and an etching rate of 0.8 nm/mm were successfully sputtered in an optimized sputtering condition, which is used to have Cu electrode selectively deposited in the scribed grooves. Uniform Ni films was successfully deposited in the scribed grooves with a made Ni electroless plating solution.
Buried contact solar cell was fabricated with a published condition and, however, the conversion efficiency was as small as 0.42 %, which is much lower than that of conventional screen printed solar cell. The reason was analyzed so that the contact resistance between Si wafer and electrodes was revealed to be much higher. To solve this the wafer with Ni layer was annealed at 400℃ in N₂ atmosphere and the ohmic contact resistance between Si wafer and Ni layer could be minimized when the specimen was annealed longer than 1 hr. Buried contact Cu electrode was formed in the scribed grooves by a method of elecro-plating. However, the grooves were not fully filled so that thin and long void remained in the center of the grooves. More vigorous study is necessary in order to find the optimized deposition condition. With an optimized condition mentioned above to minimize the contact resistance, it is expected that a buried contact solar cell with higher conversion efficiency can be fabricated.
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