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Title Page
Contents
Abstract 20
Chapter I. INTRODUCTION 22
I.1. Structures and properties of single-walled carbon nanotubes 22
I.2. Structures and properties of two-dimensional layered materials 25
I.2.1. Graphene 27
I.2.2. Transition metal dichalcogenides (TMDs) 28
I.2.3. Hexagonal boron nitride (h-BN) 29
I.3. van der Waals heterostructures 30
I.4. Integration of mix-dimensional heterostructures 33
I.5. Scope and motivation of the dissertation 35
Chapter II. EFFICIENT GATE MODULATION IN SCREENING ENGINEERED MOS₂/SWCNT-NETWORK HETEROJUNCTION VERTICAL FIELD-EFFECT TRANSISTORS 37
II.1. Background 39
II.2. Experiment 43
II.2.1. Device fabrication 43
II.2.2. Device characterization 45
II.3. Results and Discussions 51
II.3.1. Simulation of the electrostatic screening effects of the Gr-VFET and CNT-VFET. 51
II.3.2. Electrical characteristic in comparison of Gr-VFET and CNT-VFET. 54
II.3.3. Transfer characteristics of Gr-VFET and CNT-VFET along graphene and CNT current variation. 57
II.3.4. CNT-VFET with the difference of CNT density and AuCl3 doping. 59
II.3.5. Electrical characteristics for CNT-VFET, barristor and planar transistor in comparison. 59
II.3.6. Calculation of the mobility of the VFET 60
II.3.7. Calculation of the charge distribution of the VFET 62
II.3.8. Comparison of the on/off current ratios of the CNT-VFET and Gr-VFET 69
II.4. Conclusions 70
Chapter III. SINGLE-MOLECULAR ELECTRICAL SYNAPSE DEVICES USING MULTI-CROSSJUNCTIONS OF SINGLE-WALLED CARBON NANOTUBES 72
III.1. Background 74
III.2. Experiment 79
III.2.1. Synthesis of aligned-SWCNT by CVD method 79
III.2.2. Synthesis of single molecule by chemical method 80
III.2.3. Device fabrication 82
III.2.4. Characterizations 83
III.3. Results and Discussions 84
III.3.1. SWCNTs characterizations 84
III.3.2. Device structure 89
III.3.3. Multi-cross junction CNTB-SM-CNTT device[이미지참조] 91
III.3.4. Photo-switching operation of CNTB-SM-CNTT junction device[이미지참조] 93
III.3.5. Electrical synapse performance of CNTB-SM-CNTT devices[이미지참조] 95
III.3.6. Single molecular rectification of CNTB-SM (ferrocenylpyrene)-CNTT[이미지참조] 101
III.4. Conclusions 102
Chapter IV. TUNING THE INHOMOGENEOUS CHARGE TRANSPORT IN ZNO INTERFACES FOR ULTRAHIGH ON/OFF RATIO TOP-GATE FIELDEFFECT TRANSISTOR ARRAYS 104
IV.1. Background 106
IV.2. Experiment 109
IV.2.1. Device fabrication 109
IV.2.2. Characterizations 111
IV.3. Results and Discussions 113
IV.3.1. Device structure 113
IV.3.2. Effect of passivation layer on ZnO film 114
IV.3.3. Effect of buffer layer (BL) on hybrid device 122
IV.3.4. Buffer layer of h-BN on hybrid device 132
IV.4. Conclusions 133
Chapter V. SUMMARY AND OUTLOOK 135
V.1. Summary 135
V.2. Outlook 136
References 138
Figure I.1. (a) The carbon atoms are arranged in a honeycomb lattice. A nanotube can be... 23
Figure I.2. (a) Schematic of a top-gated carbon nanotube FETs. (b) Schematic of an array... 24
Figure I.3. (a) Schematic of 1D-2D FET with a SWCNT as gate electrode. (b) Optical... 25
Figure I.4. Classified of 2D materials family (a) h-BN, (b) MoS₂, (c) black phosphorus,... 26
Figure I.5. (a) Honeycomb lattice. (b) 3D band structure. (c) Ambipolar electric field in... 28
Figure I.6. (a) Atom structure of TMDs. (b) Calculated band structures for MX₂ monolayer.... 29
Figure I.7. (a) Atom structure of h-BN and interlayer perturbation potentials. (b)... 30
Figure I.8. (a) Building vdW heterostructures as stacking lego blocks. (b) Layer spacing... 31
Figure I.9. vdW heterostructures using the 2D materials. (a) vertical photodetector,... 31
Figure I.10. (a) Schematic illustration of transfer process for vdW integration. Wet and... 33
Figure I.11. Integration of mix-dimensional heterostructures device applications... 35
Figure II.1. (a) Three-dimensional view of vertical field-effect transistor (VFET) with... 42
Figure II.2. (a) Schematics of the fabrication steps for the CNT-VFET. (b) SEM and optical... 44
Figure II.3. (a) An optical image of CNT-VFET device. Raman maps of the peaks at (b)... 46
Figure II.4. XRD characteristic of (a) MoS₂ film and (b) CNT film. (c) XPS spectra of Mo... 48
Figure II.5. (a) Optical image of the Gr-VFET device. (b) AFM image of the MoS₂ flake... 50
Figure II.6. (a) Raman spectroscopy of monolayer graphene grown by chemical vapor... 50
Figure II.7. Three-dimensional schematics of the (a) CNT/MoS₂/metal (CNT-VFET) and... 52
Figure II.8. Transfer and output characteristics of the (a, b) Gr-VFET and (c, d) CNT-... 55
Figure II.9. Transfer characteristics (VG-Isd) of (a) Gr-VFET and (b) CNT-VFET (solid...[이미지참조] 58
Figure II.10. Output characteristics (Vsd-Isd) of CNT-VFET with the difference of CNT...[이미지참조] 59
Figure II.11. (a) Optical images of vertical transistor CNT-VFET, barristor and planar... 60
Figure II.12. (a) Mobility of CNT-VFET along the CNT density. (b) Mobility of CNT-... 62
Figure II.13. Simulated energy band diagrams of the Gr-VFET at Vsd of (a)-0.2 V and...[이미지참조] 68
Figure II.14. Comparison of the on/off current ratios of the CNT-VFET and Gr-VFET as... 69
Figure III.1. Schematic of lateral single molecule junction that highlights the expansion of... 75
Figure III.2. Schematic of vertical single molecule junction that highlights the expansion... 77
Figure III.3. Schematic of the synthesis procedure for (E)-4-(phenyldiazenyl) benzene... 81
Figure III.4. (a) FTIR spectra of precursor and synthesized diazonium salt. (b) FTIR... 81
Figure III.5. NMR spectra of precursor and diazonium salts. (a) ¹H-NMR (500 MHz,... 82
Figure III.6. (a) Schematic fabrication procedure of CNTB-SM-CNTT multi-cross...[이미지참조] 83
Figure III.7. (a) Transfer characteristics of CNTB and CNTT at Vds＝0.1V under the gate...[이미지참조] 84
Figure III.8. (a) SEM image of CNTB-SM-CNTT junction device. (b) AFM image of the...[이미지참조] 86
Figure III.9. I-V characterizations of CNTB, before and after molecule self-assembly...[이미지참조] 87
Figure III.10. (a) Raman and (b) FTIR characterizations of SWCNT, before and after... 87
Figure III.11. (a) A schematic illustration of the three-dimensional view of the CNTB-SM-...[이미지참조] 90
Figure III.12. (a) An optical image of multi-cross junction devices (3x3 CNT arrays) with... 91
Figure III.13. I-V characteristics of multi-cross-junction's devices from #1 to #9,... 93
Figure III.14. Photo-switching operation of CNTB-SM-CNTT cross-junction devices. (a)...[이미지참조] 93
Figure III.15. Light irradiation responses of CNTB, CNTT and CNTB-CNTT junction without...[이미지참조] 95
Figure III.16. Schematic of (a) electrical synapse and (b) chemical synapse. 96
Figure III.17. (a) Schematic of electrical synapse with connection state (left-panel), dis-...... 97
Figure III.18. (a) Typical I-V curve of a CNTB-SM-CNTT cross-junction device. The...[이미지참조] 98
Figure III.19. (a) SEM image of single molecular rectification of CNTB-SM...[이미지참조] 101
Figure IV.1. (a) Illustration of the device structure. (b) Transfer characteristics of the... 107
Figure IV.2. Fabrication process of hybrid ZnO/BL/Al₂O₃ TG-FET. (a) Schematic... 110
Figure IV.3. XRD patterns of ZnO film (red) and multi-layer of ZnO/BL/Al₂O₃ (blue).... 111
Figure IV.4. (a) SEM image of ZnO film. (b) EDS mapping of ZnO film in (a). (c) Zn, O, and... 112
Figure IV.5. Chemical structure of alkylphosphonic acid molecule. 113
Figure IV.6. (a) Schematic illustration of three-dimensional view of hybrid ZnO/BL/Al₂O₃... 114
Figure IV.7. Transfer characteristics of ZnO back-gate FET with passivation metal oxides... 114
Figure IV.8. Electrical transport of back-gate FET for pristine ZnO and ZnO/Al₂O₃ devices.... 116
Figure IV.9. (a) Transfer characteristics of pristine ZnO and ZnO/Al₂O₃ back-gate FET... 118
Figure IV.10. (a) Optical image of hybrid ZnO/BL/Al₂O₃ TG-FET device. (b) AFM image... 120
Figure IV.11. Transfer characteristics of back-gate FET for pristine ZnO, ZnO/BL, and... 122
Figure IV.12. (a) Transfer characteristics of hybrid ZnO/BL/Al₂O₃ TG-FET with respect... 123
Figure IV.13. AFM image with the Root Mean Square (RMS) roughness at the surface of... 127
Figure IV.14. (a) Fabrication process of hybrid ZnO/BL/Al₂O₃ TG-FET arrays for large-... 128
Figure IV.15. (a) Optical image of our hybrid ZnO/BL/Al₂O₃ TG-FET array in large-scale... 130
Figure IV.16. Transfer characteristics of hybrid ZnO/BL/Al₂O₃ TG-FET for different... 132
Figure IV.17. (a) Schematic structure of hybrid ZnO/1L-hBN/Al₂O₃ TG-FET, where... 133
초록보기
Physical device scaling of traditional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) has driven progress in computing for decades; however, continued scaling is become increasingly difficult. Consequently, there is a need for minimiture the integrated circuit beyond-silicon nanotechnologies. Besides, ever since the discovery of carbon nanotube (CNT), graphene and transition metal dichalcogenide (TMD), 1D-2D layered materials as the platforms for exploiting the extraordinary properties in the low-dimensional physics. Owing to their small diameter (CNT), thin, flat and a dangling-bond-free surface, which will interact each other through van der Waals (vdW) forces and promise an order-of-magnitude improvement in device performance. However, it remains a challenge to produce the vertical configuration of mix-dimensional heterostructures over large-scale areas with high quality. In particular, graphene electrode cannot perform as below 10 nm scaled electrodes due to the band gap opening in graphene nanoribbon. Together, graphene electrode in vertical-field-effect-transistor (VFET), which possess the screening effect by the bottom gate-induced modulation, resulting to low on/off current ratio. On the other hand, CNT is commercialized materials with small range of diameter (1-2 nm), which is not only increasing the number of devices in the integrated circuit but also can enhance the device performance owing to low screening effect. In this dissertation, the systematically study the screening effect on VFET was discussed, while also highlight the improving the device scaling limits of integration circuits.
In Chapter 1, 1D-2D materials structures and properties are briefly reviewed. In chapter 2, the screening effect was systematically study with CNT (1D)/MoS₂ (2D) VFET. In this topic, a screening-engineered CNT network/MoS₂/metal heterojunction CNT-VFET is fabricated for an efficient gate modulation independent of the drain voltage. In Chapter 3, for further increasing the number of devices in future integrated circuit, we proposed and demonstrated the vertical memristor by constructing the CNT (1D) and single molecule (0D). In chapter 4, we systematically study the screening effect on the interface-doped between ZnO /others oxide heterojunctions. Finally, the perspectives from my personal point of view in vdW heterostructure are covered by the Chapter 5.MARC 보기
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