표제지
Abstract
요약
목차
제1장 서론 11
제2장 이론 13
2.1. 평판 디스플레이 시장의 Hot Topics 13
2.2. FPD 시장의 전망 16
2.3. FPD 內 LCD 시장의 동향 18
2.4. TFT LCD 공정 20
2.4.1. TFT LCD 이론 20
2.4.2. TFT LCD layer 형성 21
2.4.3. TFT LCD 공정 23
2.4.4. Photolithograph 공정 25
2.4.4.1. Photolithography 공정 순서 27
2.4.4.2. Photoresist 31
2.5. Dry etch 공정 34
2.5.1. Dry Etch 기술 34
2.5.2. Plasma species 38
2.5.3. Plasma parameter 39
2.5.4. Etching mechanism 40
2.5.5. 장치 구성도 42
제3장 실험 47
3.1. Photoresist 막의 제조 및 식각 47
3.2. 분석 및 측정 49
제4장 결과 및 고찰 50
4.1. 광학 현미경 분석 50
4.2. FE-SEM분석 53
4.3. FT-IR분석 56
4.4. XPS 59
제5장 결론 70
참고문헌 72
[표 2.1] Compare the TFT technology of LTPS, a-Si, Oxide for AMOLED 17
[표 2.2] Schematic of cross-sectional view of TFT Layer chart 22
[표 2.3] Flowchart of photolithograph process 28
[표 2.4] Flowchart of plasma reaction process 34
[표 2.5] Schematic diagram of dry etcher types 36
[표 2.6] Block diagram of temperature control system 37
[표 3.1] Schematic diagram of experimental procedure 48
[표 4.1] Atomic weight percentage of C-Cl₂ cluster 64
[표 4.2] Atomic weight percentage of C-Cl₂ cluster after PR strip process 69
[그림 2.1] 10th Top issues in FPD market in 2013~2015 15
[그림 2.2] All AMFPD area maket by Technology 16
[그림 2.3] Trend and Development of FPD TV market 18
[그림 2.4] Large Area LCD Supply and demand prediction 19
[그림 2.5] Schematic of cross-sectional view of TFT Panel 21
[그림 2.6] The basic concept of photolithograph 24
[그림 2.7] Schematic of patterning process in TFT LCD 24
[그림 2.8] Schematic diagram of photolithography systems (a) Proximity printing, (b) Projection printing 26
[그림 2.9] Concept of photoresist reaction 27
[그림 2.10] Typical glass processes following patterning step (a) Ion implantation (b) Etch process 30
[그림 2.11] Schematic of different patterning reaction by photoresist types 32
[그림 2.12] Thickness of residual resist after exposure 33
[그림 2.13] Schematic of plasma reaction process 35
[그림 2.14] Chemical reaction of plasma in dry etch process 38
[그림 2.15] Schematic of sputter etching mechanism 40
[그림 2.16] Schematic of chemical etching mechanism 40
[그림 2.17] Schematic of ion enhanced etching mechanism 41
[그림 2.18] Schematic of ion enhanced inhibiting mechanism 41
[그림 2.19] Block diagram of dry etcher machine 42
[그림 2.20] Block diagram of RF generator 43
[그림 2.21] Block diagram of matching controller 44
[그림 2.22] Block diagram of Mass Flow Controller(MFC) 44
[그림 2.23] Block diagram of pressure control system 45
[그림 2.24] Block diagram of Auto Pressure Control(APC) valve 45
[그림 2.25] Block diagram of temperature control system 46
[그림 4.1] Microscopic image in n+ dry etching process as a function of Cl₂ gas flow 51
[그림 4.2] Microscopic image after PR stripping process as a function of Cl₂ gas flow 52
[그림 4.3] Schematic of FE-SEM images in n+ dry etching process as a function of Cl₂ gas flow 54
[그림 4.4] Schematic of FE-SEM images at 1400sccm Cl₂ gas in n+ dry etching process as a function of strip time 55
[그림 4.5] FT-IR spectra in n+ dry etch process as a function of Cl₂ gas flow 57
[그림 4.6] FT-IR spectra as a function of Cl₂ gas flow after PR stripping process 58
[그림 4.7] XPS spectra as a function of Cl₂ gas flow 0sccm 60
[그림 4.8] XPS spectra as a function of Cl₂ gas flow 300sccm 61
[그림 4.9] XPS spectra as a function of Cl₂ gas flow 600sccm 62
[그림 4.10] XPS spectra as a function of Cl₂ gas flow 1400sccm 63
[그림 4.11] Atomic weight percentage of C-Cl₂ cluster according to different Cl₂ flow rates in n+ dry etch process 64
[그림 4.12] XPS spectra after PR stripping process as a function of Cl₂ gas flow 0sccm 65
[그림 4.13] XPS spectra after PR stripping process as a function of Cl₂ gas flow 300sccm 66
[그림 4.14] XPS spectra after PR stripping process as a function of Cl₂ gas flow 600sccm 67
[그림 4.15] XPS spectra after PR stripping process as a function of Cl₂ gas flow 1400sccm 68
[그림 4.16] Atomic weight percentage of C-Cl₂ cluster according to different Cl₂ flow rates after PR stripping process 69