Title Page
Contents
ABSTRACT 12
Chapter 1. Introduction 17
1.1. Overview of field-effect transistor (FET) 17
1.2. Next-generation FET 18
1.3. Thesis outline 18
Chapter 2. Electrical properties of 2D FET 22
2.1. Introduction 22
2.1.1. Basic structure of 2D vdW multilayers 22
2.1.2. Thomas Fermi screening effect 24
2.2. Electrical characterization (I-V) 25
2.3. Y-Function method (YFM) 29
2.4. Low-frequency (LF) noise measurement 31
Chapter 3. Carrier transport mechanism in rhenium disulfide 34
3.1. Introduction 34
3.2. Drain induced channel migration 35
3.2.1. Device fabrication 35
3.2.2. Electrical characterization 35
3.2.3. LF noise measurement 43
3.3. Abnormal conductance enhancement at high temperature 46
3.3.1. Device fabrication 46
3.3.2. Electrical characterization 46
3.3.3. Mobility extraction 50
3.4. Conclusion 55
Chapter 4. Surface effects on van der Waal FET: black phosphorus and rhenium disulfide 56
4.1. Introduction 56
4.2. Top channel restriction in 2D vdW materials 57
4.2.1. Device fabrication 57
4.2.2. Electrical characterization on BP 60
4.2.3. Electrical characterization on ReS₂ 63
4.2.4. Drain bias polarity effects on carrier transport in 2D multilayers 68
4.3. Conclusion 72
References 73
Publication lists 79
ABSTRACT IN KOREAN 80
Abstract Figure. The basic structure of two-dimensional van der Waal... 16
Figure 2.1. The basic (a) schematic and (b)equivalent resistance network... 23
Figure 2.2. (a) ID-VGS curve (transfer curve) and (b) ID-VD (output...[이미지참조] 27
Figure 2.3. The (a) ID differentiated by VGS (gm) and the method for extracting...[이미지참조] 28
Figure 2.4. The representative YFM graph to extract parameters 30
Figure 2.5. The system of noise measurement 32
Figure 2.6. The typical type of 1/f noise tendency 33
Figure 3.1. (a) Cross sectional schematic and (b) AFM image of fabricated... 37
Figure 3.2. Electrical characterization of multilayer ReS₂ device. (a) output... 38
Figure 3.3. We illustrate carrier transport mechanism in 2D multilayer ReS₂ in... 42
Figure 3.4. (a) Representative LF noise spectra as a function of VGS at VD=...[이미지참조] 45
Figure 3.5. (a) Device schematic, (b) AFM image (left panel) including... 47
Figure 3.6. ID-VD output characteristic curves at (a) T=300K and (b) T=...[이미지참조] 49
Figure 3.7. Transfer curve at T=(a) 300K and (b) 420K, respectively. VD-...[이미지참조] 51
Figure 3.8. Temperature-dependent field-effect mobility (symbols) and... 54
Figure 4.1. Device structure and optical Raman spectra of multilayer TMDs.... 59
Figure 4.2. Electrical characterization of the p-type BP multilayers. (a) ID-VD...[이미지참조] 62
Figure 4.3. Electrical characterization of the n-type ReS₂ multilayers. (a) ID-...[이미지참조] 64
Figure 4.4. (a) VD-dependent μFE and (b) VT of our ReS₂ devices at high vacuum...[이미지참조] 67
Figure 4.5. VD polarity effects on the carrier transport mechanism. VD-...[이미지참조] 70
Figure 4.2. Conceptual illustration of the vanished top-channel in BP and ReS₂... 71