표제지
목차
ABSTRACT 10
초록 12
I. INTRODUCTION 14
II. MATERIAL AND METHODS 16
II-1) 장비 설계 16
II-2) 실험 방법 18
II-3) 측정 방법 20
III. RESULTS AND DISCUSSION 21
III-1) 저주파 축전결합형 Argon 플라즈마 특성 분석 21
III-2) 저주파 축전결합형 CH₄ / Ar / H₂ 플라즈마 GaAs 식각 30
III-3) 저주파 축전결합형 BCl₃ 플라즈마 GaAs 식각 33
V. CONCLUSIONS 51
VI. REFERENCE 53
Table 1. A process condition Table of Low Frequency Capacitively Coupled BCl₃ Plasma (LFCCP) GaAs Etching system. 19
Table 2. EDS table of GaAs reference substrate and GaAs etched in LF BCl₃ CCP for 3 minutes at 125 W. 48
Figure 1. A schematic of Low Frequency Capacitively Coupled BCl₃ Plasma (LFCCP) system 17
Figure 2. A schematic of Low Frequency Capacitively Coupled Ar Plasma (LFCCP) system. 23
Figure 3. The photo of Low Frequency Capacitively coupled Ar plasma at 50 W. 24
Figure 4. The graph of phase difference between current and voltage by oscilloscope. 25
Figure 5. The graph of phase difference with LF Ar CCP input power change. 26
Figure 6. The graph of Voltage and current by oscilloscope. 27
Figure 7. The Total Harmonic Distortion Graph at different LF powers during LF Ar CCP. 28
Figure 8. Optical Emission Spectroscopy (OES) graph of Low frequency Ar plasma at 50 W. 29
Figure 9. Optical Emission Spectroscopy (OES) graph of LF CH₄ / H₂ / Ar CCP at 75 W. 31
Figure 10. The photos of LF Capacitively Coupled CH₄ /H₂/ Ar Plasma GaAs etching reactor 32
Figure 11. The photo of Low Frequency Capacitively Coupled BCl₃ Plasma at power 100 W. 34
Figure 12. Optical Emission Spectroscopy (OES) at different LF powers during LF BCl₃ CCP etching. 35
Figure 13. Optical Emission Spectroscopy (OES) data from 720 nm to 850 nm at different LF powers during LF BCl₃ CCP etching. 36
Figure 14. Etch rate and roughness with LFCCP input power changed. 39
Figure 15. Etch selectivity of GaAs/Photoresist as a function of LFCCP input power. 40
Figure 16. GaAs etch rates and surface roughness as a function of LFCCP process time. 41
Figure 17. SEM photos of GaAs reference substrate and GaAs etched in LF BCl₃ CCP for 3 minutes. 43
Figure 18. SEM photo of etched GaAs (Pr has been removed after 5 min, 100W,O2 10sccm ashing) 44
Figure 19. SEM photo of GaAs etched at 100W (LFCCP) for 5 min. 45
Figure 20. EDS mapping photos of GaAs reference substrate and GaAs etched in LF BCl₃ CCP for 3 minutes 47
Figure 21. XPS graph of GaAs reference substrate and GaAs etched in LF BCl₃ CCP for 3 minutes. 50