Title Page
Contents
ABSTRACT 10
Ⅰ. Introduction 13
Ⅱ. MATERIALS AND METHODS 17
1. Materials 17
2. Fabrication method 18
2.1. Shift of middle logic voltages in ternary inverter 18
2.2. Logic-in-memory operation based on ternary inverter 19
Ⅲ. RESULT AND DISCUSSION 21
1. Shift of middle logic voltages in ternary inverter 21
1.1. Formation mechanism of ternary inverter 21
1.2. Shift mechanism of middle logic voltages in ternary inverter circuits 26
2. Logic-in-memory operation based on ternary inverter 30
2.1. I-V characteristics of FETs and ternary/binary inverter behavior 30
2.2. The conversion mechanism between ternary/binary operations 35
2.3. The transient operation of the ternary/binary inverter 38
2.4. I-V characteristics of FETs and binary/ternary inverter behavior 41
2.5. Stability and reliability of the binary/ternary inverter 45
2.6. The transient operation of the binary/ternary inverter 52
Ⅳ. CONCLUSIONS 55
Ⅴ. REFERENCES 57
ABSTRACT IN KOREAN 60
Figure 1. The structure of the ternary inverter. (a) The circuit diagram of the ternary inverter composed of a SWCNT/IGZO H-FET and an IGZO-FET.... 23
Figure 2. The I-V characteristics of FETs composing the ternary inverter. The I-V characteristics of (a) IGZO-FET, (b) SWCNT-FET, (c) ambipolar-FET... 25
Figure 3. The formation mechanism of middle logic voltage shifts. (a) The I-V characteristics of IGZO-FET which have three different channel length.... 28
Figure 4. The results of the ternary inverter which has shifted middle logic voltages. (a) Middle logic voltages of ternary inverter depend on... 29
Figure 5. The device structure and the I-V characteristics of each FETs. (a-b) Schematic device structure and optical microscopy image of InO-FET,... 32
Figure 6. The VTH shift width (△VTH) in the I-V characteristics hysteresis of each FETs. △VTH in the I-V characteristic hysteresis of (a) SWCNT-FET...[이미지참조] 33
Figure 7. The circuit diagram and the results of the ternary/binary inverter behavior. (a) The circuit diagram of the ternary/binary inverter... 34
Figure 8. The conversion mechanism between ternary and binary operations depends on the VIN sweep directions. I-V characteristics of the SWCNT/InO... 37
Figure 9. The transient operation of the ternary/binary inverter. (a) Schematic illustration showing the transient operation of the inverter.... 40
Figure 10. The I-V characteristics of each FETs and the results of binary/ternary inverter. The I-V characteristics (ID-VG) of (a) InO-FET...[이미지참조] 43
Figure 11. VTCs and DC gains of the inverter in the forward sweep and the backward sweep. VTCs of the inverter in (a) the forward sweep and (b) the... 44
Figure 12. Air stability of binary/ternary inverter as a function of days kept in air. The change of (a) mid-level width, (b) mid-level voltage and... 48
Figure 13. Reliability of binary/ternary inverter as a function of time with continuous bias stress. The change of (a) mid-level width, (b) mid-... 49
Figure 14. Measured characteristics of inverter with continuous biasstress. (a) VTC of ternary inverter and (b) I-V characteristic of InO-FET. 50
Figure 15. Spatial distributions of device parameters from two different batches. The distributions of (a) mid-level width, (b) mid-level voltage,... 51
Figure 16. The transient operation of binary/ternary inverter. (a) The input and measured output signal of the binary/ternary operation. (b) The... 54