Hafnium oxide (HfO2) films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at 250oC using TEMAH [tetrakis(ethylmethylamino)hafnium] and O2 plasma. HfO2 films showed a relatively low carbon contamination of about 3at%. As-deposited and annealed HfO2 films showed amorphous and randomly oriented polycrystalline structure, respectively. The interfacial layer of HfO2 films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of HfO2 films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of HfO2 films. HfO2 films deposited by remote PEALD using TEMAH and O2 plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.