목차
[표제지 등]=0,1,2
제출문=0,3,1
요약문=i,4,2
Summary=iii,6,2
Contents=v,8,2
목차=vii,10,2
그림목차=ix,12,3
표목차=xii,15,1
제1장 서론=1,16,3
제2장 이론적 고찰=4,19,1
제1절 고체산화물 연료전지(SOFC)=4,19,1
1. 고체 산화물 연료전지의 원리=4,19,4
2. YSZ 고체 전해질의 특징=8,23,3
제2절 Electron Beam Physical Vapor Deposition=11,26,1
1. EB-PVD의 원리=11,26,5
2. EB-PVD의 특성=16,31,3
3. EB-PVD에 의한 핵형성과 성장=19,34,1
제3장 실험 방법=20,35,1
제1절 SOFC 전해질 코팅을 위한 음극 기판 제조=20,35,3
제2절 SOFC 전해질 제조를 위한 EB-PVD 코팅=23,38,1
1. EB-PVD Target 제조=23,38,1
2. EB-PVD를 이용한 YSZ 전해질 제조=23,38,2
3. EB-PVD를 이용한 YSZ 전해질의 전기 전도도 측정=24,39,1
4. ED-PVD를 이용한 YSZ 전해질의 기체 투과도 측정=24,39,5
5. 미세 조직 및 결정상 분석=28,43,1
6. EB-PVD를 이용한 SOFC 단전지 제조 및 성능 평가=28,43,2
제3절 초음파 분무 열분해법을 이용한 분말 합성=30,45,1
제4장 결과 및 토의=31,46,1
제1절 SOFC 전해질 코팅을 위한 음극 기판 제조=31,46,4
제2절 SOFC 전해질 제조를 위한 EB-PVD 코팅=35,50,1
1. 기판의 미세구조에 따른 YSZ 코팅 막의 영향=35,50,3
2. 기판의 온도 변화에 따른 YSZ 전해질 막의 미세구조 및 결정상 분석=38,53,5
3. EB-PVD를 이용한 YSZ 전해질의 전기 전도도 측정=43,58,4
4. EB-PVD를 이용한 YSZ 전해질의 기체 투과도 측정=47,62,2
5. EB-PVD를 이용한 SOFC 단전지 제조 및 성능 평가=49,64,4
제3절 초음파 분무 열분해장치=53,68,1
1. 초음파 분무 열분해 장치 제작 및 설치=53,68,2
2. 초음파 분무 열분해 장치를 이용한 LaSrCoO₃분말 합성=55,70,2
제5장 결론=57,72,2
참고문헌=59,74,3
서지정보양식=62,77,2
[그림 2-1] Schematic Diagram Showing The Operating Principle Of A SOFC Single Cell=6,21,1
[그림 2-2] Schematic View Of Tuthular And Planar SOFC Stacks, Materials And Mass Flow. (A) Tubular (B) Segment-Type Tubular (C) Planar (Co-Flow Type), Counter-Flow-Type Or Cross Flow-Type Planar Stacks And Not Shown For Simplicity=7,22,1
[그림 2-3] Schematic Diagram Showing The Phase Transformation Of Zircunia=9,24,1
[그림 2-4] Schematic View Of PVD Coating Process (Evaporation, Particle Transport, Condensation And Growth)=13,28,1
[그림 2-5] Schematic Diagram Showing Thickness Of The Film As Functions Of X&H=15,30,1
[그림 2-6] Schematic Diagram Showing Effect Of Substrate Temperature On Columnar Microstructure During EB-PVD Of YSZ=15,30,1
[그림 2-7] Schcmatic Diagram Showing Classification Of Coating Pnocess With Coating Thickness=17,32,1
[그림 2-8] Schematical View Of Deposition Rate Of Coating Processes=18,33,1
[그림 2-9] Schematic Diagram Showing Mechanism Of Coating Process By PVD Such As Adsorption, Condensation And Growth Of Ad-Atom On The Surface=19,34,1
[그림 3-1] Procedure Of NiO-YSZ Anode Substrate=21,36,1
[그림 3-2] Heating Schedule Of NiO-YSZ Composite=22,37,1
[그림 3-3] Procedure Of The YSZ Films Prepared By EB-PVD=25,40,1
[그림 3-4] Schematic Diagram Of EB-PVD Process For YSZ Coating=26,41,1
[그림 3-5] The Measuring Device For Electrical Properties Studies Of The YSZ Films On Alumina By Using 4-Probe D.C.&A.C. Method=27,42,1
[그림 3-6] Schematic Diagram Of The System To Evaluate Gas Permeability Of The YSZ Films Prepared By EB-PVD=27,42,1
[그림 3-7] Schematic Diagram Of The System To Evaluate Performance For SOFC Button Cell Prepared By EB-PVD=29,44,1
[그림 3-8] Procedure Of The La(0.6)Sr(0.4)CoO₃Powder Prepared By Ultrasonic Spraying Pyrolysis(이미지참조)=30,45,1
[그림 4-1] Particle Size Distribution For Sample A, B, C=32,47,1
[그림 4-2] Porosity Of NiO-YSZ Anode Substrate For Sample Type A, B, C=32,47,1
[그림 4-3] Electrical Conductivity Of NiO-YSZ Anode Substrate For Sample Type=33,48,1
[그림 4-4] Microstructure Of The NiO-YSZ Anode Substrate=34,49,1
[그림 4-5] FE-SEM Microstructure Of The YSZ Film Deposited On Alumina Substrate At Substrate Temperature Of 950℃ By EB-PVD. (A)(B):Cross-Section, (C)(D):Surface=35,50,1
[그림 4-6] FE-SEM Microstructure Of The YSZ Film Deposited On Porous NiO-YSZ Anode Substrate At Substrate Temperature Of 950℃ By EB-PVD. (A)Cross-Section, (B)Surface=37,52,1
[그림 4-7] XRD Patterns Of The YSZ Films On The Porous NiO-YSZ And Alumina Substrate Deposited By EB-PVD At Substrate Temperature Of 950℃=37,52,1
[그림 4-8] FE-SEM Micrographs Of Surface The YSZ Films Deposited On The NiO-YSZ Substrates As A Function Of Substrate Temperature (A) 600℃, (B) 700℃, And (C) 800℃ (D) 950℃=39,54,1
[그림 4-9] (A) A Schematic 3-D Illustration Of The Projection Of The YSZ Grain Along The [111] Direction And Along The [1-10] Direction=40,55,1
[그림 4-10] XRD Patterns Of The YSZ Films On The NiO-YSZ Substrate Deposited By EB-PVD As A Functions Of The Substrate Temperature=41,56,1
[그림 4-11] FE-SEM Micrographs Of Cross-Section Of The YSZ Films Deposited On The NiO-YSZ Substrates As A Function Of Substrate Temperature (A) 600℃, (B) 700℃, (C) 800℃ And (D) 950℃=42,57,1
[그림 4-12] FE-SEM Micrographs Of Cross-Section At Higher Magnification Of The YSZ Films Deposited On The NiO-YSZ Substrates As A Function Of Substrate Temperature (A) 600℃, (B) 700℃, (C) 800℃ And (D) 950℃=42,57,1
[그림 4-13] Effect Of Oxygen Partial Pressure On Electrical Conductivity Of The YSZ Films Deposited As A Function Of The Substrate Temperature And The YSZ Film Deposited At Substrate Temperature Of 950℃=44,59,1
[그림 4-14] Effect Of Total Electrical Conductivity Of The YSZ Films Deposited By EB-PVD As A Function Of Substrate Temperature=45,60,1
[그림 4-15] Arrhenius Plot Of Log(σT) vs. 1000/T For The YSZ Films Deposited At Different Temperature=46,61,1
[그림 4-16] Change Of The Gas Flux Difference Against The Pressure Difference Of The YSZ Films Deposited By EB-PVD As A Function Of Substrate Temperature=48,63,1
[그림 4-17] Buttom-Type SOFC Single Cell With The YSZ Film Prepared By EB-PVD. (A) Microstructure Of Cross-Section (B) Photograph=50,65,1
[그림 4-18] Impedance Spectra Of Button-Type SOFC Single Cell With The YSZ Film Prepared By EB-PVD At 800℃=51,66,1
[그림 4-19] Performance Of The Button-Type SOFC Single Cell With The YSZ Film Prepared By EB-PVD At 800℃=52,67,1
[그림 4-20] System Of Ultrasonic Spray Pyrolysis For Nano-Coating=54,69,1
[그림 4-21] FE-SEM Microstructure Of The LSC Powder Prepared By Ultrasonic Spray Pyrolysis. (A) Lower Magnification,(B) Higher Magnification Of The LSC Powder=56,71,1
[그림 4-22] XRD Patterns Of The LSC Powder Prepared By Ultrasonic Spray Pyrolysis As Functions Of The Furnace Temperature=56,71,1
(표 2-1) Crystallographic Characteristics Of Zirconia=9,24,1
(표 2-2) Value Of K As Pressure And Evaporation Rate=14,29,1
(표 3-1) Sample Type Of NiO-YSZ Mixture=21,36,1
(표 3-2) Procedure Conditions Of The YSZ Films Prepared By EB-PVD=25,40,1
(표 3-3) Specimens Prepared By EB-PVD As A Function Of The Substrate Temperature=26,41,1
(표 4-1) Comparison Of The Gas Permeability Of The YSZ Films Prepared By EB-PVD As A Function Of The Substrate Temperature=47,62,1