목차
1. 서론 1
2. 본론 2
2.1. 초고순도 탄화규소 분말 제조 기술 현황 2
2.1.1. 초고순도 탄화규소 분말의 출발원료 3
2.1.2. 초고순도 탄화규소 분말 합성기술 4
2.1.3. 초고순도 탄화규소 분말기술 해외동향 6
2.2. 초고순도 탄화규소 분말 산업 및 시장 최근 동향 6
3. 결론 7
참고문헌 8
Table 1. Classification of the Synthetic method for ultra-high purity SiC powder with raw materials including carbon and silicon 3
Table 2. 일본의 탄화규소 분말 시장 7
Fig. 1. Advanced silicon carbide materials and its applications from semiconductor to aerospace industry. 1
Fig. 2. Ultra-high purity SiC powder and 4H/6H single crystal developed in WPM project. 2
Fig. 3. Comparison of the major impurity contents between SiC powder and single crystal wafer. 2
Fig. 4. Raw materials for ultra-high purity SiC powder. 3
Fig. 5. Process map of the carbothermal reduction for ultra-high purity SiC powder. 4
Fig. 6. FE-SEM image of ultra-high purity SiC powder from modified carbothermal reduction (β-phase and particle size over 70 ㎛). 5
Fig. 7. Comparison of themicropipe and dislocation density distribution map between 4H SiC wafers grown by (a, c) non-purified and (b, d) purified SiC powder. 5
Fig. 8. 연도별 탄화규소 분말 시장규모 및 전망.(산업동향리포트_2012년 5호). 6