목차
1. 서론 1
2. 양자형 적외선 검출기 연구개발 동향 2
3. 양자형 적외선 검출기 성능 지표 4
4. 적외선 검출용화합물 반도체 에피 기판 성장 기술 5
5. 양자우물 적외선 검출소자 (QWIP) 6
6. 양자점 적외선 검출소자 (QDIP) 7
7. 제2형 초격자 적외선 검출기 (T2SL-IP) 8
8. 결론 10
참고문헌 10
Table 1. Classification of Infrared Detector 1
Fig. 1. Infrared in relation to electromagnetic specrtrum. 1
Fig. 2. History of the development of infrared detector. 4
Fig. 3. Schematic of molecular beam epitaxy (MBE). 5
Fig. 4. Schematic of metal organic chemical vapor deposition (MOCVD). 5
Fig. 5. (a) Three kind of intraband transition (b) Photocurrent generated in MQW structure. 6
Fig. 6. Intersubband transiton in QD structure and TEM Image of InAs QD. 7
Fig. 7. Heterostructure schematic of multiple stacked SML-QD. 0.3 ML InAs SML-QDs with 2-6 stacks embedded ina 5.3 nm In 0.15Ga0.85As. 8
Fig. 8. Intraband transition in (a) type-I superlattice (b) type-II superlattice. 9
Fig. 9. Heterostructure of InAs/(In,Ga)Sb T2SL-IP for nin/pin/nBn type. 9