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ABSTRACT

목차

제I장 서론 14

제II장 이론 18

제1절 플라즈마의 정의 18

1. 폴라즈마의 특성 18

2. 플라즈마의 진단 36

제2절 텅스텐 박막의 플라즈마 화학 증착 37

1. 반응 메카니즘 37

2. 플라즈마-물질 상호작용 48

3. 텅스텐 박막의 특성 48

제III장 실험장치 및 방법 54

제1절 시편 준비 54

제2절 PECVD-W 박막의 증착 55

1. 플라즈마 화학 증착 장치 55

2. 텅스텐 박막의 증착 59

제3절 급속 열처리 60

제4절 PECVD-W Schottky 다이오우드 제작 및 특성평가 62

1. 두께의 측정 62

2. 비저항의 측정 63

3. Auger Electron Spectroscopy (AES) 63

4. Transmission Electron Microscope (TEM) 64

5. 전류-전압 특성 측정 64

6. Scanning Electron Microscope (SEM) 65

7. X-ray Diffraction (XRD) 65

8. Secondary-Ion Mass Spectrometry (SIMS) 65

9. Electron Spectroscopy for Chemical Analysis (ESCA)/X-ray Photoemission Spectroscopy (XPS) 65

10. Deep Level Transient Spectroscopy (DLTS), Isothermal Capacitance Transient Spectroscopy (ICTS) 66

11. Capacitance-Voltage 측정 (C-V) 66

12. Reactive Ion Etching (RIE) 67

13. W/Si 및 W/GaAs 다이오우드의 제작 67

제IV장 실험결과 68

제1절 PECVD-W 박막의 특성 68

제2절 PECVD-W 박막의 급속열처리 효과 84

제3절 PECVD-W/GaAs Schottky 다이오우드 90

제V장 논의 92

제1절 PECVD-W 박막의 특성 92

1. 결정구조 및 물리적 특성[내용누락;p.81-82] 92

2. 전기적 특성[내용누락;p.93-94] 104

제2절 PECVD-W 박막의 급속열처리 효과 115

제3절 PECVD-W GaAs Schottky 다이오우드 128

1. 박막의 증착 130

2. W/GaAs 다이오우드의 특성 143

제VI장 결론 157

I. PECVD-W/Si의 RTA효과 157

II. PECVD-W/GaAs Schottky 다이오우드 158

참고문헌 159

표목차

Table II-1. Desired properties of the metallization for integrated circuits 51

Table II-2. Properties of metals and silicides 53

Table V-1. Resistivities of the tungsten and tungsten silicide films on Si 113

Table V-2. Leakage current and film resistivity of W-, WNx/Si diodes fabracted with various reactant gases[이미지참조] 114

Table V-3. Conditions of deposition, RTA, and etching 119

Table V-4. Barrier heights and ideality factors of PECVD-W films on GaAs deposited at various deposition conditions 150

그림목차

Fig. II-1. Potential distribution in plasma reactor. 21

Fig. II-2. Self DC bias in RF discharge. (a) first cycle (b) steady state 24

Fig. II-3. Gibbs free energy versus temperature for SiH₄, H₂, Si and Al reduction reactions at a pressure of 0.1 ㎫. 40

Fig. II-4. The complexity of parameter interactions in plasma processing. 43

Fig. II-5. Typical ranges of substrate temperature and incident particle energy in various deposition techniques. 44

Fig. II-6. Schematic of thermal and plasma-enhanced CVD reactors. 46

Fig. II-7. Activation energy diagram for thermally-driven (solid line) and plasma-enhanced (dashed line) reactions. 47

Fig. II-8. Schematic of plasma-material interactions. 49

Fig. II-9. Crystal structures of (a) α-W, and (b) β-W. 52

Fig. III-1. Schematic diagram of PECVD system. 57

Fig. III-2. Schematic diagram of experimental apparatus for the measurement of substrate temperature in a cold wall PECVD reactor. 58

Fig. III-3. Schematic diagram of rapid thermal annealing system. 61

Fig. IV-1. Deposition rate of PECVD tungsten films as a function of deposition temperature for reactant... 69

Fig. IV-2. Resistivity vs temperature of tungsten films deposited using reactant gases of (a) WF6-Ar, (by WF6-H2,...[이미지참조] 70

Fig. IV-3. SEM surface morphology ot PECVD tungsten films deposited using reactant gases of (a) WF6-Ar, (b) WF6-H2,...[이미지참조] 72

Fig. IV-4. Thickness of PECVD-W films as a function of deposition time; film thickness is linearly dependent on the... 73

Fig. IV-5. Resistivity versus film thickness for PECVD-tungsten films. 74

Fig. IV-6. Deposition rate vs. reciprocal temperature of PECVD- and LPCVD-tungsten films. 75

Fig. IV-7. Resistivities of PECVD- and LPCVD-tungsten films as a function of H2/WF6 flow rate ratio.(total pressure＝0.5Torr,...[이미지참조] 76

Fig. IV-8. Deposition rate and electrical resistivity of PECVD-tungsten films as a function of SiH4/WF6 flow rate.[이미지참조] 78

Fig. IV-9. Deposition rate vs. reciprocal temperature of PECVD-tungsten film deposited using WF6-H2 and WF6-SiH4-H2 gases.[이미지참조] 79

Fig. IV-10. Resistivity of PECVD-tungsten films as a function of deposition temperature. 80

Fig. IV-11. Deposition rate of PECVD-tungsten films on silicon and silicon dioxide substrates as a function of deposition temperature. 82

Fig. IV-12. Resistivity vs. substrate temperature of tungsten films grown on (a) silicon dioxide and (b) silicon. 83

Fig. IV-13. Electrical resistivity of the PECVD-W films deposited on silicon and silicon dioxide at 300℃ as a function of rapid... 85

Fig. IV-14. Resistivity as a function of rapid thermal annealing time in PECVD-W film deposited using gas flow rates of (a) WF6/H2...[이미지참조] 86

Fig. IV-15. Thickness reduction of the PECVD-W films as a function of RTA temperature (for 15 sec). 87

Fig. IV-16. Surface mophology of the (a) as-deposited, and (b) rapid thermal annealed (at 900℃, for 20 sec) tungsten films. 88

Fig. IV-17. Etching rates of the PECVD-W films; etching rate decreases with the increase of RTA temperature. 89

Fig. IV-18. Deposition rate and resistivity as a function of deposition temperature in PECVD-W films on GaAs. 91

Fig. V-1. X-ray rocking curves of PECVD-tungsten films deposited using reactant gases of (a) WF6-Ar, (b) WF6-H2,...[내용누락;p.81][이미지참조] 94

Fig. V-2. Thickness and resistivity of tungsten films as a function of deposition time (WF6-Ar reactant gas).[내용누락;p.82][이미지참조] 94

Fig. V-3. Auger depth-profile of a PECVD-tungsten film deposited using WF6 and H₂. In the inset: differential Auger intensity of...[이미지참조] 96

Fig. V-4. X-ray rocking curves of tungsten films deposited on Si using (a) PECVD, H2/WF6 ＝ 3, (b) PECVD, H2/WF6 ＝ 25,... 97

Fig. V-5. Etching phenomena which may comes trouble in CVD-W. 100

Fig. V-6. Variation in X-ray rocking curves of PECVD-W films as a function of silane flow (WF6/SiH4/H2＝4/x/100 sccm).[이미지참조] 101

Fig. V-7. Cross-section SEM micrographs of PECVD tungsten films deposited with different silane flow (WF6/SiH4/H2＝4/x/100...[이미지참조] 102

Fig. V-8. Cross-sectional TEM micrograph of as-grown tungsten films on silicon deposited using (a)WF6-H2, (b)WF6-SiH4-H2.[내용누락;p.93][이미지참조] 105

Fig. V-9. Resistivity and deposition rate of PECVD-tungsten films grown on Si with WF6-SiH4-H2 as a function of RF power density.[이미지참조] 116

Fig. V-10. Effect of RF power density on sheet resistance of PECVD tungsten films deposited from various reactant gases. 117

Fig. V-11. X-ray rocking curves of as-deposited and annealed PECVD-W films on silicon and silicon dioxide. Heat treatment was... 121

Fig. V-12. Cross-section SEM micrograph of PECVD-W/Si structures. (a) as-deposited, (b) annealed, 900℃/20sec 122

Fig. V-13. Cross-section TEM micrograph of PECVD-W/Si structure annealed at 900℃ for 20 sec. 123

Fig. V-14. SIMS profiles of tungsten films on silicon : (a) as deposited and (b) rapid thermal annealed at 900℃ for 20 sec. 124

Fig. V-15. XPS spectra of (a),(c) as-deposited WNx films,and (b),(d) rapid thermal annealed (900℃/20 sec) WNx films.[이미지참조] 127

Fig. V-16. Leakage current of W/Si diode as a function of RTA temperature. 129

Fig. V-17. Schematic of HTSAGFET (high temperature self-aligned gate field effect transistor) process. 131

Fig. V-18. Cross section SEM micrograph of PECVD-W film on GaAs (WF6/H2＝4/100 sccm, deposition temperature; 300℃, RF...[이미지참조] 133

Fig. V-19. SIMS profiles of PECVD-W/GaAs deposited at (a) 300℃ and (b) 350℃ 134

Fig. V-20. (a) Differential Auger electron intensity of as-grown PECVD tungsten film as a function of Auger energy, and (b) Auger... 136

Fig. V-21. XPS spectrum of a PECVD-tungsten film on GaAs after 3 min Ar-ion etching. 137

Fig. V-22. DLTS spectra of (a) PECVD-W/GaAs and (b) Au/GaAs. 139

Fig. V-23. ICTS spectra of (a) PECVD-W/GaAs and (b) Au/GaAs. 140

Fig. V-24. X-ray rocking curves of as-deposited PECVD-W/GaAs film at substrate temperature of 250℃, and after rapid thermal... 141

Fig. V-25. X-ray rocking curves of as-deposited PECVD-WNx/GaAs films at substrate temperature of 250℃, and after rapid thermal...[이미지참조] 142

Fig. V-26. Forward and reverse I-V curves of diodes made from (a) PECVD-W on GaAs (WF6-H2, Φb; 0.762 eV, n; 1.047),... 144

Fig. V-27. Schottky barrier height (Φb) and diode ideality factor (n) of PECVD-W, WNx/GaAs as a function of RTA temperature...[이미지참조] 145

Fig. V-28. Forward and reverse I-V characteristics of PECVD-W/GaAs diode (a) as-deposited, and (b) after 800℃ rapid thermal... 146

Fig. V-29. Forward and reverse I-V characteristics of PECVD-WNx/GaAs diodes (a) as-deposited, (b) after rapid thermal annealing at...[이미지참조] 148

Fig. V-30. Optical DLTS (ODLTS) spectra of Si-implanted GaAs after rapid thermal annealing at 800℃ for 20 sec. (a) PECVD-W,... 151

Fig. V-31. Photoluminescence (PL) spectra of the Si-implanted GaAs with PECVD-W capping layer before and after rapid thermal... 152

Fig. V-32. Photoluminescence (PL) spectra of the Si-implanted GaAs with PECVD-WNx capping layerbefore and after rapid thermal...[이미지참조] 153

Fig. V-33. Photoluminescence (PL) spectra of the Si-implanted GaAs with PECVD-W capping layerafter rapid thermal annealing at... 155

Fig. V-34. Photoluminescence (PL) spectra of the Si-implanted GaAs with PECVD-WNx capping layerafter rapid thermal annealing...[이미지참조] 156

초록보기

 The effects of rapid thermal annealing (RTA) on the properties of plasma-enhanced chemical vapor deposited (PECVD) tungsten thin Aims were investigated. Blanket tungsten thin films were deposited using WF6-Ar, WF6-H2, WF6-SiH4-H2 and WF6-SiH4-Ar gas mixtures. The resistivity of films grown by plasma hydrogen and silane reduction of tungsten hexafluoride at 300℃ was about 10μΩ-cm, and crystal structure was α-W (bcc structure). Higher deposition rate and lower resistivity PECVD-W films could be obtained with WF6-SiH4-H2 gas system in comparison with WF6-H2 system at surface reaction temperatures of 200~300℃. Also, the chracteristics of tungsten films deposited on silicon dioxide by PECVD method were similar to those of the tungsten films deposited on silicon. Annealing was performed in N₂ atmosphere in the temperature range of 500℃~1100℃. The resistivity of the tungsten film deposited on silicon is reduced slightly or unchanged up to about 600℃ and, beyond this annealing temperature, is increased rapidly with the increase of RTA temperature. Therefore, at high temperatures above 600℃, it is believed that transition from α -phase tungsten to metastable 6-phase tungsten took place, and rapid silicidation occurred at the interface due to the interaction of tungten and silicon. These phenomena were also observed from the X-ray diffraction data. On the other hand, the decrease of resistivity of tungsten Elm deposited on SiO₂ with the increase of RTA temperature may be due to grain growth and defect removal. The thickness and the etch rate (by Reactive Ion Etching) of the tungsten films decreased with the increase of RTA temperature.

A low resistivity tungsten Schottky contact to GaAs has been made by PECVD. The resistivity of tungsten films deposited on GaAs at 300℃ is about 18 μΩ-cm and the film structure is (110), (200), and (211) oriented α -phase W. The resistivity of W films deposited above 350℃ increased due to the diffusion of Ga and As atoms from GaAs into the W films. This has been confirmed by secondary ion mass spectroscopy. I-V characteristics of GaAs Schottky contacts formed at 300℃ show that the barrier height is 0.81 eV and the ideality factor is 1.04. They do not degrade during rapid thermal annealing at temperatures ranging from 500℃ to 700℃ for 10 sec without an arsenic over-pressure. In addition, the diode characteristics and thermal stability of pure W/GaAs contact were compared with those of WNx/GaAs structures. Electrical measurements show that WNx/GaAs contacts are thermally stable up to the rapid thermal annealing temperature of 850℃. This is believed to be the result of the good diffusion barrier formed by the film in which the diffusion paths are blocked by the nitrogen atoms.

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