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Abstract 8

제1장 서론 10

1.1. 산화아연의 특성 및 응용 10

1.2. 다결정 실리콘의 필요성 및 문제점 11

1.2.1. 이론적 배경 11

1.2.2. 다결정 실리콘 성장방법의 문제점 12

1.3. 최종연구 목적 13

1.4. 참고문헌 14

제2장 실험 및 분석 방법 16

2.1. 성장단계 16

2.1.1. 스퍼터법 16

2.1.2. 열증착법 18

2.2. 분석 20

2.2.1. Optical microscope (OM) 20

2.2.2. Raman spectroscopy (Raman) 22

2.2.3. Electron backscatter diffraction (EBSD) 25

2.2.4. Atomic force microscopy (AFM) 26

2.2.5. Energy dispersive spectroscopy (EDS) 28

2.3. 참고문헌 29

제3장 Al-Si층 교환 성장에서 ZnO 표면 거칠기가 Si 재결정화에 미치는 영향 30

3.1. 서론 30

3.2. 실험내용 31

3.3. ZnO 표면 거칠기를 이용해 성장된 다결정 실리콘의 재결정화 특성 33

3.3.1. ZnO의 표면 거칠기 제어 33

3.3.2. poly-Si의 결정 형상 분석 35

3.3.3. 층 교환 성장법을 통해 성장된 poly-Si 분석 37

3.3.4. poly-Si의 결정화율 분석 39

3.3.5. poly-Si의 배향성 분석 41

3.4. 참고문헌 44

제4장 ZnO를 이용한 Al-Si 층 교환 성장에서 열처리 온도가 Si 재결정화에 미치는 영향 45

4.1. 서론 45

4.2. 실험내용 46

4.3. 열처리 온도에 따라 성장된 다결정 실리콘의 재결정화 분석 47

4.3.1. poly-Si의 결정형상 분석 47

4.3.2. poly-Si의 결정화율 분석 49

4.3.3. poly-Si 배향성 분석 51

4.3.4. poly-Si 광학적 특성 분석 53

4.4. 참고문헌 55

제5장 Al-Si 층 교환 성장에서 ZnO 표면 patterning이 Si 재결정화에 미치는 영향 57

5.1. 서론 57

5.2. 실험내용 59

5.3. ZnO pattering을 이용해 성장된 다결정 실리콘의 결정 특성 60

5.3.1. ZnO 식각을 통한 표면 변화 분석 60

5.3.2. poly-Si 결정형상 분석 62

5.3.3. poly-Si 결정화율 분석 64

5.3.4. poly-Si의 결정성 분석 66

5.4. 참고문헌 68

제6장 요약 및 결론 69

이력서 70

표목차

Table 3.1. Summary of the surface roughness of ZnO, ALE conditions, average grain size, and preferential (100) orientation coverage for each sample. 43

그림목차

Fig. 2-1. Schematic illustration of sputter chamber. 17

Fig. 2-2. Schematic illustration of thermal evaporation system. 19

Fig. 2-3. Schematic illustration of Optical microscope. 21

Fig. 2-4. Schematic illustration of Raman scattering. 24

Fig. 2-5. Schematic illustration of Atomic force microscope. 27

Fig. 3-1. Schematic drawing of the fabrication process of poly-Si layer by the ZnO assisted aluminum-induced layer exchange process: (a)... 32

Fig. 3-2. Atomic force microscope images of the ZnO grown on a glass substrates : (a) ZnO/glass (ZnO RMS: 0.73 ㎚), (b) ZnO/glass... 34

Fig. 3-3. Optical micrograph of the annealed samples at 577℃ for 0, 15, 30, 40, 180 min; (a) sample-A, (b) sample-B, and (c) sample-C.... 36

Fig. 3-4. Cross-sectional SEM images and EDS mapping of the sample; (a) as-deposited sample with a stacking sequence of... 38

Fig. 3-5. Annealing time dependency of crystallized fraction. The crystallization rate of poly-Si is closely related with the roughness of ZnO. 40

Fig. 3-6. In-plane EBSD images of the samples; (a) sample-A, (b) sample-B, and (c) sample-C. One can observe that the preferential... 42

Fig. 4-1. Optical micrograph of the annealed samples at 500, 577, 600 ℃ for 0, 15, 30, 40, 180min ;(a)sample-A, (b)sample-B, and... 48

Fig. 4-2. Annealing time dependency of crystallized fraction. The crystallization rate of poly-Si is closely related with annealing temperature. 50

Fig. 4-3. In-plane EBSD images of the samples; (a) sample-A, (b) sample-B, and (c) sample-C. One can observe that the preferential... 52

Fig. 4-4. Raman spectra of the samples : (a) As-deposited, (b) Sample-A, (c) Sample-B, (d) Sample-C. We can observe that the... 54

Fig. 5-1. The acid etched hole in the ZnO/glass by using scanning electron microscopy : (a) as-deposited, (b) sample-A : 4.5 um (hole... 61

Fig. 5-2. Optical micrograph of the annealed samples at 577℃ for 0, 1, 2, 3, 10min ;(a)sample-A, (b)sample-B, and (c)sample-C. The color... 63

Fig. 5-3. Annealing time dependency of crystallized fraction. The crystallization rate of poly-Si is closely related with hole size ; (a)... 65

Fig. 5-4. Transmission electron microscopy diffraction pattern of the annealed samples at 577℃ for (a)1, (b) 180min. 67

초록보기

 High-quality polycrystalline silicon (poly-Si) has attracted much attention because of its wide range of applicability in electronics, such as thin-film transistors (TFT) and solar cell. However, growth of poly-Si layer on a low cost substrate with large area is still difficult. In this thesis, it was proposed to grow poly-Si layer on a glass substrate by layer exchange method on ZnO layer, and the effect of ZnO surface and annealing temperature was discussed in terms of growth rate, crystallized fraction, diameter, and orientation of poly-Si nuclei.

First of all, it has been investigated on the effect of surface roughness of zinc oxide (ZnO) layer on the growth of poly-Si layer. It was found that the growth rate, grain size, crystallized fraction and preferential orientation are closely related with the surface roughness of the underlying ZnO layer. As the ZnO surface roughens, growth rate, grain size, and crystallized fraction increase, and preferential orientation of (100) direction was appeared as well. The poly-Si layer formed on a ZnO with a roughness of 2.4 nm in root-mean-square revealed fast growth rate (40 minutes), large grain size (~20 pm) and high crystallized fraction (51 %) with a preferential (100) orientation.

In the next part, it has been investigated on the effect of annealing temperature to the layer exchange process. Annealing was performant at 500 ~ 600℃. It was found that the preferential orientation and growth rate of poly-Si layer is closely related with the annealing temperature. As the annealing temperature increasing, faster growth rate, larger crystallized fraction and (100) preferential orientation was observed.

Consequently, it was provided that a new approach to obtain large grain size poly-Si on glass substrate that contains ZnO light scattering and transparent conducting layer. It is expected to be used for the high performance thin film poly-Si based solar cell.

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