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동의어 포함

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Title Page

ABSTRACT

Contents

List of Abbreviations 18

Chapter 1. Introduction 19

1.1. Motivation 19

1.2. Organization 20

References 21

Chapter 2. Modeling and Design Methodology of Class-F/Class-F-1 RF PA 23

2.1. Introduction 23

2.2. Basic Theory 23

2.2.1. Current Waveforms 24

2.2.2. Comparison of Knee voltage effect 29

2.2.3. Voltage Waveforms 31

2.2.4. Non-linear Capacitance effect 34

2.2.5. Comparison of RF characteristics 39

2.3. Simulation and Numerical Results 41

2.4. Implementation and Measurements 42

2.4.1. Implementation of PAs 42

2.4.2. Measurement Results 44

2.5. Conclusions 46

References 46

Chapter 3. Analysis of High Efficiency Power Amplifier Using Second Harmonic Manipulation: Inverse Class-F/J Amplifier 49

3.1. Introduction 49

3.2. Infinite Second Harmonic Impedance-Inverse Class-F Mode 49

3.2.1. Voltage Waveform 49

3.2.2. Current Waveform 51

3.2.3. Effect of the Input Voltage Waveform 56

3.3. Modeling for PA-2HM with finite Second Harmonic Impedance-Class-J Mode 59

3.3.1. Case I: αi2 = 0 : Class-J Mode(이미지참조) 59

3.3.2. Case II: αi2 = 0 : Modified Class-J Mode(이미지참조) 66

3.3.3. Degeneration by Non-Linear Effect 69

3.4. Measurement and Implementation 70

3.4.1. Harmonic Load Pull Measurement 70

3.4.2. Implementation of PAs with Optimized Output Matching Networks 71

3.5. RF Characteristic Comparison 73

3.5.1. Output Power, Power Gain, and Efficiency 73

3.5.2. Linearity for the Modulated Signal 74

3.6. Conclusions 75

References 76

Chapter 4. High Efficiency Envelop Tracking Transmitter with Optimized Class-F-1 Amplifier and Two-bit Envelope Amplifier for 3G LTE Base Station 78

4.1. Introduction 78

4.2. Optimized PA Design Method 79

4.2.1. Critical Supply Voltage Region for the ET Transmitter 79

4.2.2. Optimized Inverse Class-F Design at the Critical Region 80

4.2.3. Optimized Envelope Signal Regeneration 86

4.2.4. Average Efficiency of an Optimized PA 89

4.3. New Envelope Signal Modulator Using 2-bit Switching Stage 89

4.3.1. Average efficiency of an envelope amplifier 92

4.3.2. Optimization of the Inductance and Switching Frequency 93

4.3.3. Reducing ripple current using 2-bit Switching Stage 94

4.4. Implementation and Measurements 95

4.4.1. Implementation of ET Transmitter 95

4.4.2. Measurement Results 97

4.5. Conclusions 98

References 98

Chapter 5. Envelope Amplifier with Multiple-Linear Regulator for Envelope Tracking Power Amplifier 100

5.1. Introduction 100

5.2. Analysis of Envelope Tracking PA Based On Envelope Reshaping Signal 101

5.2.1. Average Efficiency of Envelope Amplifier 101

5.2.2. Envelope Shaping Consideration 102

5.2.3. Simulated Results 104

5.3. Proposed Envelope Supply Incorporating All-Linear Regulators 105

5.3.1. Basic Concept 105

5.3.2. Average Efficiency Enhancement 110

5.3.3. Insensitivity Characteristics against Load Variation and Noise Performance 112

5.4. IMPLEMENTATION AND MEASUREMENT 114

5.5. Conclusions 119

References 119

Chapter 6. Analysis and Implementation of Doherty Power Amplifier with Two-Point Envelope Modulation 122

6.1. INTRODUCTION 122

6.2. BASIC THEORIES OF DOHERTY AMPLIFIER 123

6.2.1. Analytic Model of Currents in Voltage Plane 123

6.2.2. Previous Compensation-Uneven and Asymmetric 131

6.3. PROPOSED TWO POINT SUPPLY MODULATION 133

6.3.1. Gate Envelope Signal Adaptation 133

6.3.2. Drain Envelope Signal Adaptation 135

6.4. DOHERTY AMPLIFIER DESIGN AND IMPLEMENTATION 137

6.4.1. Doherty Amplifier with Optimized Offset Line 137

6.4.2. Gate and Drain Supply Modulation 142

6.5. MEASURED RESULTS 143

6.6. CONCLUSION 146

References 146

Chapter 7. Single-Ended CMOS Doherty Power Amplifier Using Current Boosting Technique 149

7.1. INTRODUCTION 149

7.2. COMPENSATION OF DOHERTY OPERATION 151

7.3. CONCLUSION 153

References 154

Chapter 8. Linear Single-Ended CMOS Power Amplifier Using Minimum IMD3 Tracking Method 156

8.1. INTRODUCTION 156

8.2. NONLINEAR OPERATION OF CMOS CASCODE AMPLIFIER 157

8.2.1. Nonlinearity Behavior of a Cascode Amplifier 157

8.3. IMD3 SWEET SPOT TRACKING METHOD 159

8.3.1. Linearity dependency versus gate voltage of CG 159

8.3.2. Optimized sweet spot tracking and temperature dependency 164

8.3.3. Further PAE improvement using envelope tracking (ET) 166

8.3.4. Class-F CMOS RF PA 168

8.4. IMPLEMENTATION AND MEASUREMENT 171

8.5. CONCLUSION 174

References 175

국문요약 178

Curriculum Vitae 180

List of Tables

Table 2-1. Performance comparison with reported PAs using GaN HEMT technology 46

Table 3-1. COMPARISON OF RF CHARACTERISTICS WITH DIFFERENT INPUT HARMONIC CONDITIONS 59

Table 3-2. COMPARISON RESULTS 71

Table 4-1. Comparison of PAs using different matching networks 89

Table 4-2. PARAMETER SPECIFICATIONS FOR AN ENVELOPE AMPLIFIER 95

Table 5-1. Performance comparison of the envelope signal 103

Table 5-2. Performance comparison 112

Table 5-3. Performance comparison 118

Table 6-1. Performance comparison 146

Table 7-1. Performance comparison. 154

Table 8-1. Performance comparison. 174

List of Figures

Figure 1-1. Block diagram of mobile system evolution (Courtesy of Postech.) 19

Figure 2-1. Configuration of Class-F and Class-F-1 amplifiers, and a simplified analytical model of an... 24

Figure 2-2. Normalized DC and harmonic current components as a function of the conduction angle. 28

Figure 2-3. Current waveforms for Class-F and Class-F-1 amplifiers as a function of θ=ωt.(이미지참조) 29

Figure 2-4. Normalized knee voltage for Class-F and Class-F-1 amplifiers.(이미지참조) 30

Figure 2-5. Voltage waveforms for Class-F and Class-F-1 amplifiers as a function of θ=ωt under different...(이미지참조) 32

Figure 2-6. Drain efficiency and optimum fundament load resistance of Class-F and Class-F-1 amplifiers as...(이미지참조) 33

Figure 2-7. Simplified circuit model of an RF power amplifier with an output impedance matching... 34

Figure 2-8. Normalized nonlinear capacitance versus drain voltage for a GaN device. 35

Figure 2-9. fundament load impedance trajectory with different initial capacitance values. 37

Figure 2-10. Computed voltage waveform with (dashed line) and without (solid line) the effect of... 38

Figure 2-11. Predicted drain efficiency as a function of on-resistance and operating frequency. 40

Figure 2-12. Output power performance of Class-F and Class-F-1 amplifiers 40

Figure 2-13. Simulated time-domain voltage and current waveforms for a (a) Class-F amplifier at α=π, (b)... 41

Figure 2-14. Calculated and simulated drain efficiencies as a function of the conduction angle 42

Figure 2-15. Proposed Output matching networks for (a) Class-F and (b) Class-F-1 amplifiers.(이미지참조) 43

Figure 2-16. Realized (a) Class-F and (b) Class-F-1 amplifiers(이미지참조) 43

Figure 2-17. Measured and output power, power gain, and drain efficiency for a 3.54㎓ CW signal for... 45

Figure 2-18. Output spectral density of a 10㎒-3G LTE with 8.3-㏈ PAPR before and after pre-... 45

Figure 3-1. Voltage waveform of a PA manipulated using an optimum second harmonic. 50

Figure 3-2. Simplified RF FET model. 51

Figure 3-3. Drain efficiency performance as a function of the knee voltage to supply voltage ratio. 55

Figure 3-4. Input voltage waveform for the different loading condition. 55

Figure 3-5. Input voltage waveforms for different loading conditions. 56

Figure 3-6. Output current waveforms for different loading conditions. 59

Figure 3-7. Peaking effect of current waveform as a function of bi2.(이미지참조) 61

Figure 3-8. Drain current waveform for the different bi2 values.(이미지참조) 62

Figure 3-9. Smith chart of the calculated fundamental and second harmonic reactance curves, and... 64

Figure 3-10. Smith chart of the fundamental and second harmonic reactance curves, and maximum... 65

Figure 3-11. Simulated current waveform for the different second harmonic loading conditions. 66

Figure 3-12. Calculated (a) and (b) simulated RF load line for Class-F-1 and Class-J PA.(이미지참조) 66

Figure 3-13. Smith chart of fundamental and second harmonic impedance curves and constant efficiency... 67

Figure 3-14. Simplified RF FET model including non-linear capacitance 68

Figure 3-15. Measured impedance contour by the harmonic load pull (maintaining an output power of... 69

Figure 3-16. Implemented output matching network 72

Figure 3-17. Simulated (a) and measured (b) S-parameter for proposed output matching network. 73

Figure 3-18. The implemented PAs incorporating the proposed output termination. 73

Figure 3-19. Measured and simulated output power, power gain, drain efficiency, and PAE for a 3.5 ㎓... 74

Figure 3-20. Plotted AM/AM curve as a function of the input modulation signal. 74

Figure 3-21. Spectral density of the average output power (applying same output power back off level of... 75

Figure 4-1. Calculated amplitude distribution of a 10㎒-bandwidth 3G LTE modulated signal with... 80

Figure 4-2. Configuration of a Class-F-1 amplifier and a simplified analytical model of an FET.(이미지참조) 80

Figure 4-3. Normalized nonlinear capacitance versus drain voltage for a GaN device 84

Figure 4-4. Drain efficiency as a function of envelope distribution for different initial capacitance values. 85

Figure 4-5. Simulated voltage and current waveforms for different initial capacitance conditions... 86

Figure 4-6. Load line for different input levels and output envelope signal characteristics. 87

Figure 4-7. Measured power spectral density of PA used different envelope voltage signals. 88

Figure 4-8. Measured output envelope signal characteristic using a non-shaping method, and an optimized... 88

Figure 4-9. Measured power-added efficiencies of PAs versus envelope voltage signals for different... 89

Figure 4-10. Efficiency of the switching stage as a function of switching frequency (a) and the power... 90

Figure 4-11. Simplified schematic of the linear stage using switching stage with different levels. 91

Figure 4-12. Current and voltage values of the switching stage for different quantized levels (the black... 94

Figure 4-13. Simulated and measured efficiencies of an envelope amplifier (RLoad = 8.5Ω)(이미지참조) 95

Figure 4-14. Fully-integrated 3.54㎓ 10W envelope tracking transmitter for a 3G LTE base station. 96

Figure 4-15. Output voltage of the switching stage for different quantized levels 96

Figure 4-16. Output voltage of the switching stage for different quantized levels 97

Figure 4-17. Normalized nonlinear capacitance versus drain voltage for a GaN device 97

Figure 5-1. Highly efficient envelope tracking transmitter. 102

Figure 5-2. Highly efficient envelope tracking transmitter. 103

Figure 5-3. RFPA impedance as function of normalized envelope voltage at given envelope shaping 104

Figure 5-4. Efficiency of an envelope amplifier as a function of a normalized envelope voltage. 104

Figure 5-5. Conventional linear regulator. 105

Figure 5-6. Efficiency of linear regulator versus output voltage back-off. 105

Figure 5-7. Proposed envelope amplifier. 106

Figure 5-8. Equivalent model with respect to the envelope voltage, as described in (9). 107

Figure 5-9. Partial load current under the condition of(9). 108

Figure 5-10. Measured efficiency of dc-dc converter. 108

Figure 5-11. Efficiency of the proposed EA as a function of the envelope voltage compared with that of... 109

Figure 5-12. Load current waveforms through linear regulator blocks. 109

Figure 5-13. Input and output envelope voltage for the proposed EA. 111

Figure 5-14. Instantaneous efficiency for the proposed EA 111

Figure 5-15. Impedance seen by linear regulator as function of normalized envelope voltage. 113

Figure 5-16. Power spectra density of output envelope. 113

Figure 5-17. Fabricated ET transmitter. 114

Figure 5-18. Schematic of the proposed EA with a 2.6 ㎓ 10 W GaN PA. 115

Figure 5-19. Measured s-parameter of the output matching network. 115

Figure 5-20. Measured output power, efficiency, and gain of the implemented PA. 115

Figure 5-21. Measured output power and efficiency with respect to the supply voltage. 116

Figure 5-22. Measured voltage waveform when operating an ET system. 116

Figure 5-23. Measured efficiency of proposed EA. 116

Figure 5-24. Amplitude and phase of output signal and pre-distorted signal. 117

Figure 5-25. Spectra of ET system with and without DPD functionality. 118

Figure 6-1. Current waveforms of the carrier and peaking amplifier as a function of input driven voltage. 122

Figure 6-2. Fundamental current of the carrier and peaking amplifier as a function of input driven voltage. 126

Figure 6-3. Simplified imperfect load modulation effect for the Doherty amplifier (Jell is for a carrier cell... 127

Figure 6-4. Estimated fundamental current of the carrier and peaking amplifier as a function of input... 127

Figure 6-5. Simulation set-up used to identify (19) (for σ=2). 127

Figure 6-6. Simulated fundamental current of the carrier and peaking amplifier as a function of input... 128

Figure 6-7. Simulated output power and efficiency for different backoff levels as a function of input... 129

Figure 6-8. Simulated load modulation for different backoff levels as a function of input power backoff. 130

Figure 6-9. Previous methods 10 enhance the fundamental current for a peak cell 130

Figure 6-10. Simulated efficiency and output power for an uneven case. 132

Figure 6-11. Simulated efficiency and output power for an asymmetric case. 133

Figure 6-12. Simulated gate voltage and corresponding DC current. 134

Figure 6-13. Transconductance curve as a function of drain voltage. 136

Figure 6-14. Drain envelope voltage waveform. 137

Figure 6-15. Simplified equivalent model for an off-state peaking cell. 137

Figure 6-16. Trajectory of the drain source capacitances (a) and the variation of capacitance as the center... 139

Figure 6-17. Degradation of efficiency and off impedance for different lengths of offset line. 141

Figure 6-18. Calculated (red), simulated (blue), and measured (CW) off impedances for the different... 142

Figure 6-19. Simplified schematic of proposed Doherty amplifier. 142

Figure 6-20. Photograph of fabricated Doherty amplifier. 143

Figure 6-21. Measured DC current of carrier and peaking cells with/without gate envelope modulation as... 143

Figure 6-22. Measured efficiency and output power of a Doherty amplifier with/without gate envelope... 144

Figure 6-23. Measured efficiency for different envelope modulations as a function of output power. 144

Figure 6-24. Measured spectra before/after DPD. 145

Figure 6-25. Measured gate and drain supply voltages. 145

Figure 7-1. Simplified schematic of proposed Doherty PA. 149

Figure 7-2. Simulated gain and PAE versus the output power by sweeping the bias point of the peaking... 150

Figure 7-3. Gain and current versus the output power for Vb2 of 0 and 0.4 V.(이미지참조) 150

Figure 7-4. Reshaped gate voltage of peaking PA Vb2.(이미지참조) 150

Figure 7-5. Proposed Doherty CMOS PA. 152

Figure 7-6. Measured PAE and gain versus the output power. 153

Figure 7-7. Measured spectra density at an output power of 25.2 dBm. 153

Figure 8-1. Schematic of the cascade amplifier stage. 157

Figure 8-2. Measured and simulated drain current and its derivatives versus the gate source voltage (G₂... 157

Figure 8-3. Gain and IMD3 as functions of input power with different VGS1.(이미지참조) 159

Figure 8-4. Drain current versus gate source and drain source voltage. 159

Figure 8-5. Drain current as a function of VGS1 when sweeping VG2(이미지참조) 160

Figure 8-6. G₁ and G₃ as a function of VG2(이미지참조) 161

Figure 8-7. Output power and IMD3 as a function of VG2(이미지참조) 161

Figure 8-8. PAE versus output power with and without the minimum IMD3 tracking. 162

Figure 8-9. The simulated gain and phase response as a function or output power by sweeping VG2(이미지참조) 163

Figure 8-10. The simulated optimum VG2 point and curve fitting shape.(이미지참조) 163

Figure 8-11. Simulated gain/ phase of deviations and IMD3 as a function of temperature(-20/25/85... 165

Figure 8-12. Simulated ACLR as a function of temperature(-20/25/85 degree) 165

Figure 8-13. Schematic of envelope amplifier prototype. 165

Figure 8-14. Measured efficiency of envelope amplifier with 3.9 Ohm load. 166

Figure 8-15. Output load of proposed CMOS RF PA. 167

Figure 8-16. Simulated fundamental, second and third harmonic impedances from RLOAD and (b) drain...(이미지참조) 167

Figure 8-17. Photograph of CMOS PA and OPA. 168

Figure 8-18. Photograph of the measurement setup. 168

Figure 8-19. Schematic of proposed CMOS ET transmitter. 169

Figure 8-20. Measured output power versus input power by sweeping VG2 from 2.4 to 3.6 V.(이미지참조) 170

Figure 8-21. Measured gain and PAE as a function of output power by sweeping VG2 from 2.4 to 3.6 V.(이미지참조) 170

Figure 8-22. Measured PAE as a function of supply voltage, VET(이미지참조) 170

Figure 8-23. Measured IMD3 as a function of input power by sweeping VG2 from 2.4 to 3.6 V(이미지참조) 172

Figure 8-24. Measured trajectory of IMD3 for w/ and w/o ET operation. 173

Figure 8-25. Measured EVM and ACLR for different VG2 under ET mode.(이미지참조) 173

Figure 8-26. Measured spectra for different VG2 under ET mode.(이미지참조) 174

초록보기

 3GPP LTE (Long Term Evolution)와 모바일 WiMAX 와 같은 무선 통신 시스템에서변조 방식의 피크 대 평균 전력비 (PAPR) 는 전력 증폭기에서 높은 back-off 동작을 요구하기 때문에 효율 감소의 문제점을 가지고 있다. 전력 증폭기에서의 효율 개선을 위하여 최근들어 공급 전 맙을 포락선과 같이 추적 하여 공급하는 포락선 추적 기 법 (Envelope tracking) 과 부하 변조를 이용하여 back-off 영역에서 높은 효율 특성을 가지는 도허티 전력 증폭기가 활발히 연구 되고 있다. 본 논문은 포락선 추적 기법과 도허티 송신기에서의 선형성 및 효율 개선에 관한 방법에 관한 것이다.

제안된 포락선 추적 송신기는 확률 분포에 따른 전력 증폭기의 효율을 개선하기 위하여 포락선 추적기의 하모닉 제어 전력 증폭기에 관한 모델링 및 효율 최적화 방법을 제안한다. 이와 더불어 포락선 추적 송신기에 사용되는 전압 변조기의 효율 개선을 위하여 스위칭 단의 멀티 비트 방법을 이용한 양자화 노이즈 감소 기법을 제안한다. 또한 선형성을 더욱 확보하기 위한 새로운 타입의 병렬 선형 전압 공급기를 제안한다.

기존의 도허티 송신기는 캐리어 증폭기와 피킹 증폭기의 비대칭적 전압 공급으로 인하여 전력이 커질 때 피킹 증폭기가 완전하게 동작하지 않는 문제점율 가지고 있다. 이를 해결하 기 위하여 본 논문에서는 피킹 증폭기를 이루는 트랜지스터의 바이어스를 입력 전력의 크기에 맞게 포락선 제어를 적용하는 적응 전압 공급 방식에 대하여 제안한다. 또한 도허티 송신기의 효율 극대화를 위하여 캐리어 증폭기에 포락선 추적 방식을 적용하여 낮은 전력 영역에서도 고효율 특성을 가져 전체적인 평균 효율이 증가하는 방법을 제안한다. 또한 본 논문에서는 제안된 도허티 전력 증폭기의 성능 개선 방법을 단말기용 CMOS 전력 증폭기에 적용하여 기존 Class-AB 전력 증폭기 대비 5% 이상 효율 증가를 보인다.

마지막으로 단말기용 CMOS 전력 증폭기의 선형성 개선을 위하여 캐스코드 단의 공통 게이트 단의 게이트 전압을 입력 신호에 적응적으로 조절하여 IMD3 성분을 최소화 시키는 IMD 추적 선형성 개선 방법에 대하여 제안한다.