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Title Page
ABSTRACT
Contents
List of Abbreviations 18
Chapter 1. Introduction 19
1.1. Motivation 19
1.2. Organization 20
References 21
Chapter 2. Modeling and Design Methodology of Class-F/Class-F-1 RF PA 23
2.1. Introduction 23
2.2. Basic Theory 23
2.2.1. Current Waveforms 24
2.2.2. Comparison of Knee voltage effect 29
2.2.3. Voltage Waveforms 31
2.2.4. Non-linear Capacitance effect 34
2.2.5. Comparison of RF characteristics 39
2.3. Simulation and Numerical Results 41
2.4. Implementation and Measurements 42
2.4.1. Implementation of PAs 42
2.4.2. Measurement Results 44
2.5. Conclusions 46
References 46
Chapter 3. Analysis of High Efficiency Power Amplifier Using Second Harmonic Manipulation: Inverse Class-F/J Amplifier 49
3.1. Introduction 49
3.2. Infinite Second Harmonic Impedance-Inverse Class-F Mode 49
3.2.1. Voltage Waveform 49
3.2.2. Current Waveform 51
3.2.3. Effect of the Input Voltage Waveform 56
3.3. Modeling for PA-2HM with finite Second Harmonic Impedance-Class-J Mode 59
3.3.1. Case I: αi2 = 0 : Class-J Mode(이미지참조) 59
3.3.2. Case II: αi2 = 0 : Modified Class-J Mode(이미지참조) 66
3.3.3. Degeneration by Non-Linear Effect 69
3.4. Measurement and Implementation 70
3.4.1. Harmonic Load Pull Measurement 70
3.4.2. Implementation of PAs with Optimized Output Matching Networks 71
3.5. RF Characteristic Comparison 73
3.5.1. Output Power, Power Gain, and Efficiency 73
3.5.2. Linearity for the Modulated Signal 74
3.6. Conclusions 75
References 76
Chapter 4. High Efficiency Envelop Tracking Transmitter with Optimized Class-F-1 Amplifier and Two-bit Envelope Amplifier for 3G LTE Base Station 78
4.1. Introduction 78
4.2. Optimized PA Design Method 79
4.2.1. Critical Supply Voltage Region for the ET Transmitter 79
4.2.2. Optimized Inverse Class-F Design at the Critical Region 80
4.2.3. Optimized Envelope Signal Regeneration 86
4.2.4. Average Efficiency of an Optimized PA 89
4.3. New Envelope Signal Modulator Using 2-bit Switching Stage 89
4.3.1. Average efficiency of an envelope amplifier 92
4.3.2. Optimization of the Inductance and Switching Frequency 93
4.3.3. Reducing ripple current using 2-bit Switching Stage 94
4.4. Implementation and Measurements 95
4.4.1. Implementation of ET Transmitter 95
4.4.2. Measurement Results 97
4.5. Conclusions 98
References 98
Chapter 5. Envelope Amplifier with Multiple-Linear Regulator for Envelope Tracking Power Amplifier 100
5.1. Introduction 100
5.2. Analysis of Envelope Tracking PA Based On Envelope Reshaping Signal 101
5.2.1. Average Efficiency of Envelope Amplifier 101
5.2.2. Envelope Shaping Consideration 102
5.2.3. Simulated Results 104
5.3. Proposed Envelope Supply Incorporating All-Linear Regulators 105
5.3.1. Basic Concept 105
5.3.2. Average Efficiency Enhancement 110
5.3.3. Insensitivity Characteristics against Load Variation and Noise Performance 112
5.4. IMPLEMENTATION AND MEASUREMENT 114
5.5. Conclusions 119
References 119
Chapter 6. Analysis and Implementation of Doherty Power Amplifier with Two-Point Envelope Modulation 122
6.1. INTRODUCTION 122
6.2. BASIC THEORIES OF DOHERTY AMPLIFIER 123
6.2.1. Analytic Model of Currents in Voltage Plane 123
6.2.2. Previous Compensation-Uneven and Asymmetric 131
6.3. PROPOSED TWO POINT SUPPLY MODULATION 133
6.3.1. Gate Envelope Signal Adaptation 133
6.3.2. Drain Envelope Signal Adaptation 135
6.4. DOHERTY AMPLIFIER DESIGN AND IMPLEMENTATION 137
6.4.1. Doherty Amplifier with Optimized Offset Line 137
6.4.2. Gate and Drain Supply Modulation 142
6.5. MEASURED RESULTS 143
6.6. CONCLUSION 146
References 146
Chapter 7. Single-Ended CMOS Doherty Power Amplifier Using Current Boosting Technique 149
7.1. INTRODUCTION 149
7.2. COMPENSATION OF DOHERTY OPERATION 151
7.3. CONCLUSION 153
References 154
Chapter 8. Linear Single-Ended CMOS Power Amplifier Using Minimum IMD3 Tracking Method 156
8.1. INTRODUCTION 156
8.2. NONLINEAR OPERATION OF CMOS CASCODE AMPLIFIER 157
8.2.1. Nonlinearity Behavior of a Cascode Amplifier 157
8.3. IMD3 SWEET SPOT TRACKING METHOD 159
8.3.1. Linearity dependency versus gate voltage of CG 159
8.3.2. Optimized sweet spot tracking and temperature dependency 164
8.3.3. Further PAE improvement using envelope tracking (ET) 166
8.3.4. Class-F CMOS RF PA 168
8.4. IMPLEMENTATION AND MEASUREMENT 171
8.5. CONCLUSION 174
References 175
국문요약 178
Curriculum Vitae 180
Figure 1-1. Block diagram of mobile system evolution (Courtesy of Postech.) 19
Figure 2-1. Configuration of Class-F and Class-F-1 amplifiers, and a simplified analytical model of an... 24
Figure 2-2. Normalized DC and harmonic current components as a function of the conduction angle. 28
Figure 2-3. Current waveforms for Class-F and Class-F-1 amplifiers as a function of θ=ωt.(이미지참조) 29
Figure 2-4. Normalized knee voltage for Class-F and Class-F-1 amplifiers.(이미지참조) 30
Figure 2-5. Voltage waveforms for Class-F and Class-F-1 amplifiers as a function of θ=ωt under different...(이미지참조) 32
Figure 2-6. Drain efficiency and optimum fundament load resistance of Class-F and Class-F-1 amplifiers as...(이미지참조) 33
Figure 2-7. Simplified circuit model of an RF power amplifier with an output impedance matching... 34
Figure 2-8. Normalized nonlinear capacitance versus drain voltage for a GaN device. 35
Figure 2-9. fundament load impedance trajectory with different initial capacitance values. 37
Figure 2-10. Computed voltage waveform with (dashed line) and without (solid line) the effect of... 38
Figure 2-11. Predicted drain efficiency as a function of on-resistance and operating frequency. 40
Figure 2-12. Output power performance of Class-F and Class-F-1 amplifiers 40
Figure 2-13. Simulated time-domain voltage and current waveforms for a (a) Class-F amplifier at α=π, (b)... 41
Figure 2-14. Calculated and simulated drain efficiencies as a function of the conduction angle 42
Figure 2-15. Proposed Output matching networks for (a) Class-F and (b) Class-F-1 amplifiers.(이미지참조) 43
Figure 2-16. Realized (a) Class-F and (b) Class-F-1 amplifiers(이미지참조) 43
Figure 2-17. Measured and output power, power gain, and drain efficiency for a 3.54㎓ CW signal for... 45
Figure 2-18. Output spectral density of a 10㎒-3G LTE with 8.3-㏈ PAPR before and after pre-... 45
Figure 3-1. Voltage waveform of a PA manipulated using an optimum second harmonic. 50
Figure 3-2. Simplified RF FET model. 51
Figure 3-3. Drain efficiency performance as a function of the knee voltage to supply voltage ratio. 55
Figure 3-4. Input voltage waveform for the different loading condition. 55
Figure 3-5. Input voltage waveforms for different loading conditions. 56
Figure 3-6. Output current waveforms for different loading conditions. 59
Figure 3-7. Peaking effect of current waveform as a function of bi2.(이미지참조) 61
Figure 3-8. Drain current waveform for the different bi2 values.(이미지참조) 62
Figure 3-9. Smith chart of the calculated fundamental and second harmonic reactance curves, and... 64
Figure 3-10. Smith chart of the fundamental and second harmonic reactance curves, and maximum... 65
Figure 3-11. Simulated current waveform for the different second harmonic loading conditions. 66
Figure 3-12. Calculated (a) and (b) simulated RF load line for Class-F-1 and Class-J PA.(이미지참조) 66
Figure 3-13. Smith chart of fundamental and second harmonic impedance curves and constant efficiency... 67
Figure 3-14. Simplified RF FET model including non-linear capacitance 68
Figure 3-15. Measured impedance contour by the harmonic load pull (maintaining an output power of... 69
Figure 3-16. Implemented output matching network 72
Figure 3-17. Simulated (a) and measured (b) S-parameter for proposed output matching network. 73
Figure 3-18. The implemented PAs incorporating the proposed output termination. 73
Figure 3-19. Measured and simulated output power, power gain, drain efficiency, and PAE for a 3.5 ㎓... 74
Figure 3-20. Plotted AM/AM curve as a function of the input modulation signal. 74
Figure 3-21. Spectral density of the average output power (applying same output power back off level of... 75
Figure 4-1. Calculated amplitude distribution of a 10㎒-bandwidth 3G LTE modulated signal with... 80
Figure 4-2. Configuration of a Class-F-1 amplifier and a simplified analytical model of an FET.(이미지참조) 80
Figure 4-3. Normalized nonlinear capacitance versus drain voltage for a GaN device 84
Figure 4-4. Drain efficiency as a function of envelope distribution for different initial capacitance values. 85
Figure 4-5. Simulated voltage and current waveforms for different initial capacitance conditions... 86
Figure 4-6. Load line for different input levels and output envelope signal characteristics. 87
Figure 4-7. Measured power spectral density of PA used different envelope voltage signals. 88
Figure 4-8. Measured output envelope signal characteristic using a non-shaping method, and an optimized... 88
Figure 4-9. Measured power-added efficiencies of PAs versus envelope voltage signals for different... 89
Figure 4-10. Efficiency of the switching stage as a function of switching frequency (a) and the power... 90
Figure 4-11. Simplified schematic of the linear stage using switching stage with different levels. 91
Figure 4-12. Current and voltage values of the switching stage for different quantized levels (the black... 94
Figure 4-13. Simulated and measured efficiencies of an envelope amplifier (RLoad = 8.5Ω)(이미지참조) 95
Figure 4-14. Fully-integrated 3.54㎓ 10W envelope tracking transmitter for a 3G LTE base station. 96
Figure 4-15. Output voltage of the switching stage for different quantized levels 96
Figure 4-16. Output voltage of the switching stage for different quantized levels 97
Figure 4-17. Normalized nonlinear capacitance versus drain voltage for a GaN device 97
Figure 5-1. Highly efficient envelope tracking transmitter. 102
Figure 5-2. Highly efficient envelope tracking transmitter. 103
Figure 5-3. RFPA impedance as function of normalized envelope voltage at given envelope shaping 104
Figure 5-4. Efficiency of an envelope amplifier as a function of a normalized envelope voltage. 104
Figure 5-5. Conventional linear regulator. 105
Figure 5-6. Efficiency of linear regulator versus output voltage back-off. 105
Figure 5-7. Proposed envelope amplifier. 106
Figure 5-8. Equivalent model with respect to the envelope voltage, as described in (9). 107
Figure 5-9. Partial load current under the condition of(9). 108
Figure 5-10. Measured efficiency of dc-dc converter. 108
Figure 5-11. Efficiency of the proposed EA as a function of the envelope voltage compared with that of... 109
Figure 5-12. Load current waveforms through linear regulator blocks. 109
Figure 5-13. Input and output envelope voltage for the proposed EA. 111
Figure 5-14. Instantaneous efficiency for the proposed EA 111
Figure 5-15. Impedance seen by linear regulator as function of normalized envelope voltage. 113
Figure 5-16. Power spectra density of output envelope. 113
Figure 5-17. Fabricated ET transmitter. 114
Figure 5-18. Schematic of the proposed EA with a 2.6 ㎓ 10 W GaN PA. 115
Figure 5-19. Measured s-parameter of the output matching network. 115
Figure 5-20. Measured output power, efficiency, and gain of the implemented PA. 115
Figure 5-21. Measured output power and efficiency with respect to the supply voltage. 116
Figure 5-22. Measured voltage waveform when operating an ET system. 116
Figure 5-23. Measured efficiency of proposed EA. 116
Figure 5-24. Amplitude and phase of output signal and pre-distorted signal. 117
Figure 5-25. Spectra of ET system with and without DPD functionality. 118
Figure 6-1. Current waveforms of the carrier and peaking amplifier as a function of input driven voltage. 122
Figure 6-2. Fundamental current of the carrier and peaking amplifier as a function of input driven voltage. 126
Figure 6-3. Simplified imperfect load modulation effect for the Doherty amplifier (Jell is for a carrier cell... 127
Figure 6-4. Estimated fundamental current of the carrier and peaking amplifier as a function of input... 127
Figure 6-5. Simulation set-up used to identify (19) (for σ=2). 127
Figure 6-6. Simulated fundamental current of the carrier and peaking amplifier as a function of input... 128
Figure 6-7. Simulated output power and efficiency for different backoff levels as a function of input... 129
Figure 6-8. Simulated load modulation for different backoff levels as a function of input power backoff. 130
Figure 6-9. Previous methods 10 enhance the fundamental current for a peak cell 130
Figure 6-10. Simulated efficiency and output power for an uneven case. 132
Figure 6-11. Simulated efficiency and output power for an asymmetric case. 133
Figure 6-12. Simulated gate voltage and corresponding DC current. 134
Figure 6-13. Transconductance curve as a function of drain voltage. 136
Figure 6-14. Drain envelope voltage waveform. 137
Figure 6-15. Simplified equivalent model for an off-state peaking cell. 137
Figure 6-16. Trajectory of the drain source capacitances (a) and the variation of capacitance as the center... 139
Figure 6-17. Degradation of efficiency and off impedance for different lengths of offset line. 141
Figure 6-18. Calculated (red), simulated (blue), and measured (CW) off impedances for the different... 142
Figure 6-19. Simplified schematic of proposed Doherty amplifier. 142
Figure 6-20. Photograph of fabricated Doherty amplifier. 143
Figure 6-21. Measured DC current of carrier and peaking cells with/without gate envelope modulation as... 143
Figure 6-22. Measured efficiency and output power of a Doherty amplifier with/without gate envelope... 144
Figure 6-23. Measured efficiency for different envelope modulations as a function of output power. 144
Figure 6-24. Measured spectra before/after DPD. 145
Figure 6-25. Measured gate and drain supply voltages. 145
Figure 7-1. Simplified schematic of proposed Doherty PA. 149
Figure 7-2. Simulated gain and PAE versus the output power by sweeping the bias point of the peaking... 150
Figure 7-3. Gain and current versus the output power for Vb2 of 0 and 0.4 V.(이미지참조) 150
Figure 7-4. Reshaped gate voltage of peaking PA Vb2.(이미지참조) 150
Figure 7-5. Proposed Doherty CMOS PA. 152
Figure 7-6. Measured PAE and gain versus the output power. 153
Figure 7-7. Measured spectra density at an output power of 25.2 dBm. 153
Figure 8-1. Schematic of the cascade amplifier stage. 157
Figure 8-2. Measured and simulated drain current and its derivatives versus the gate source voltage (G₂... 157
Figure 8-3. Gain and IMD3 as functions of input power with different VGS1.(이미지참조) 159
Figure 8-4. Drain current versus gate source and drain source voltage. 159
Figure 8-5. Drain current as a function of VGS1 when sweeping VG2(이미지참조) 160
Figure 8-6. G₁ and G₃ as a function of VG2(이미지참조) 161
Figure 8-7. Output power and IMD3 as a function of VG2(이미지참조) 161
Figure 8-8. PAE versus output power with and without the minimum IMD3 tracking. 162
Figure 8-9. The simulated gain and phase response as a function or output power by sweeping VG2(이미지참조) 163
Figure 8-10. The simulated optimum VG2 point and curve fitting shape.(이미지참조) 163
Figure 8-11. Simulated gain/ phase of deviations and IMD3 as a function of temperature(-20/25/85... 165
Figure 8-12. Simulated ACLR as a function of temperature(-20/25/85 degree) 165
Figure 8-13. Schematic of envelope amplifier prototype. 165
Figure 8-14. Measured efficiency of envelope amplifier with 3.9 Ohm load. 166
Figure 8-15. Output load of proposed CMOS RF PA. 167
Figure 8-16. Simulated fundamental, second and third harmonic impedances from RLOAD and (b) drain...(이미지참조) 167
Figure 8-17. Photograph of CMOS PA and OPA. 168
Figure 8-18. Photograph of the measurement setup. 168
Figure 8-19. Schematic of proposed CMOS ET transmitter. 169
Figure 8-20. Measured output power versus input power by sweeping VG2 from 2.4 to 3.6 V.(이미지참조) 170
Figure 8-21. Measured gain and PAE as a function of output power by sweeping VG2 from 2.4 to 3.6 V.(이미지참조) 170
Figure 8-22. Measured PAE as a function of supply voltage, VET(이미지참조) 170
Figure 8-23. Measured IMD3 as a function of input power by sweeping VG2 from 2.4 to 3.6 V(이미지참조) 172
Figure 8-24. Measured trajectory of IMD3 for w/ and w/o ET operation. 173
Figure 8-25. Measured EVM and ACLR for different VG2 under ET mode.(이미지참조) 173
Figure 8-26. Measured spectra for different VG2 under ET mode.(이미지참조) 174
3GPP LTE (Long Term Evolution)와 모바일 WiMAX 와 같은 무선 통신 시스템에서변조 방식의 피크 대 평균 전력비 (PAPR) 는 전력 증폭기에서 높은 back-off 동작을 요구하기 때문에 효율 감소의 문제점을 가지고 있다. 전력 증폭기에서의 효율 개선을 위하여 최근들어 공급 전 맙을 포락선과 같이 추적 하여 공급하는 포락선 추적 기 법 (Envelope tracking) 과 부하 변조를 이용하여 back-off 영역에서 높은 효율 특성을 가지는 도허티 전력 증폭기가 활발히 연구 되고 있다. 본 논문은 포락선 추적 기법과 도허티 송신기에서의 선형성 및 효율 개선에 관한 방법에 관한 것이다.
제안된 포락선 추적 송신기는 확률 분포에 따른 전력 증폭기의 효율을 개선하기 위하여 포락선 추적기의 하모닉 제어 전력 증폭기에 관한 모델링 및 효율 최적화 방법을 제안한다. 이와 더불어 포락선 추적 송신기에 사용되는 전압 변조기의 효율 개선을 위하여 스위칭 단의 멀티 비트 방법을 이용한 양자화 노이즈 감소 기법을 제안한다. 또한 선형성을 더욱 확보하기 위한 새로운 타입의 병렬 선형 전압 공급기를 제안한다.
기존의 도허티 송신기는 캐리어 증폭기와 피킹 증폭기의 비대칭적 전압 공급으로 인하여 전력이 커질 때 피킹 증폭기가 완전하게 동작하지 않는 문제점율 가지고 있다. 이를 해결하 기 위하여 본 논문에서는 피킹 증폭기를 이루는 트랜지스터의 바이어스를 입력 전력의 크기에 맞게 포락선 제어를 적용하는 적응 전압 공급 방식에 대하여 제안한다. 또한 도허티 송신기의 효율 극대화를 위하여 캐리어 증폭기에 포락선 추적 방식을 적용하여 낮은 전력 영역에서도 고효율 특성을 가져 전체적인 평균 효율이 증가하는 방법을 제안한다. 또한 본 논문에서는 제안된 도허티 전력 증폭기의 성능 개선 방법을 단말기용 CMOS 전력 증폭기에 적용하여 기존 Class-AB 전력 증폭기 대비 5% 이상 효율 증가를 보인다.
마지막으로 단말기용 CMOS 전력 증폭기의 선형성 개선을 위하여 캐스코드 단의 공통 게이트 단의 게이트 전압을 입력 신호에 적응적으로 조절하여 IMD3 성분을 최소화 시키는 IMD 추적 선형성 개선 방법에 대하여 제안한다.*표시는 필수 입력사항입니다.
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