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Title Page

Contents

Abstract 8

I. Introduction 13

II. Theoretical Background 16

II.1. 4H-SiC Power MOSFET 16

II.1.1. Planar MOSFET 16

II.1.2. Split Gate MOSFET 20

II.2. Body Diode in Power MOSFET 22

II.2.1. Reverse Recovery Characteristics 22

II.2.2. Planar MOSFET with Schottky Barrier Diode (SBD) 25

III. Proposed Power MOSFET structure 29

III.1. Asymmetric Split Gate MOSFET with SBD 29

III.1.1. Device concepts 29

III.1.2. Optimization 32

III.2. Fabrication Procedure 37

IV. Electrical Characteristics 39

IV.1. Static Characteristics 39

IV.2. Dynamic Characteristics 44

IV.2.1. Parasitic Capacitance 44

IV.2.2. Body Diode 48

IV.2.3. Switching Energy Loss 55

V. Thermal characteristics 61

VI. Conclusions 64

References 66

List of Tables

Table 3-1. Device parameters 36

Table 3-2. Fabrication Procedure 38

Table 4-1. Static performance of each structure 43

Table 4-2. Parasitic capacitance of each structure 47

Table 4-3. Body diode characteristics of each structure 54

Table 4-4. Switching characteristics of each structure 59

List of Figures

Fig. 2-1. Schematic cross-sectional views of (a) planar... 17

Fig. 2-2. The trade-off between RON,SP and BV of C-MOSFET...[이미지참조] 19

Fig. 2-3. Schematic cross-sectional views of split gate MOSFET 21

Fig. 2-4. (a) Schematic view of current path of parasitic body... 23

Fig. 2-5. SiC power MOSFET with improved body diode 25

Fig. 2-6. Schematic cross-sectional views of the CS-MOSFET 26

Fig. 2-7. The trade-off between RON,SP and BV of CS-MOSFET...[이미지참조] 28

Fig. 3-1. Schematic cross-sectional view of ASG-MOSFET 31

Fig. 3-2. The trade-off between RON,SP and BV of ASG-MOSFET...[이미지참조] 33

Fig. 3-3. The trade-off between RON,SP and VF,SBD of...[이미지참조] 35

Fig. 4-1. Off-state breakdown characteristic curves of each structure 40

Fig. 4-2. Off-state electric field distribution of (a) C-MOSFET,... 41

Fig. 4-3. On-state output characteristic curves in the linear... 43

Fig. 4-4. Parasitic capacitance of three structures (a) input /... 46

Fig. 4-5. Forward conduction characteristics of the body diode... 49

Fig. 4-6. Minority carrier (hole) density distribution of (a)... 51

Fig. 4-7. Minority carriers (hole) density distribution of (a)... 53

Fig. 4-8. Test circuit configuration for switching simulation of... 57

Fig. 4-9. Drain voltage and current during (a) turn-on... 60

Fig. 4-10. Temperature dependency of RON,SP and Vth[이미지참조] 63

Fig. 4-11. On state output curves at 300 K and 500 K 63

초록보기

4H-SiC split-gate Metal Oxide Semiconductor Field-Effect-Transistors (MOSFETs) and 4H-SiC MOSFETs with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing gate-drain capacitance and reverse recovery characteristics, respectively. However, in high voltage applications (〉 3.3 kV), high electric fields are concentrated on the split gate oxide corner, causing a gate oxide reliability issues. In addition, the embedded Schottky barrier diode widens the cell pitch, degrading static characteristics such as specific on-resistance (RON,SP) and breakdown voltage.

To solve this problem, in this thesis, an Asymmetric Split-Gate 4H-SiC MOSFET with embedded Schottky barrier diode (ASG-MOSFET) is proposed and analyzed by conducting a numerical TCAD simulation. Owing to the asymmetric structure of ASG-MOSFET, it has a relatively narrow junction field effect transistor (JFET) width. Therefore, despite using the split gate structure, it effectively protects the gate oxide by dispersing the high drain voltage in the off-state. The Schottky barrier diode (SBD) is also embedded next to the gate and above the JFET region. Accordingly, since the SBD and the MOSFET share a current path, the embedded SBD does not increase in RON,SP of MOSFET. Therefore, ASG-MOSFET significantly improves the switching characteristics without degradation of static characteristics. As a result, compared to the conventional planar MOSFET and planar with SBD, the total energy loss of the ASG-MOSFET was reduced by 79.2% and 29.8%, respectively.

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