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Title Page 2

Contents 5

ABSTRACT 17

Chapter 1. Introduction 18

1.1. Research Background 18

1.1.1. The Role of Ultra-Wide Bandgap (UWBG) Semiconductors 18

1.1.2. Diamond: The Ultimate UWBG Semiconductor 21

1.1.3. Growth method of single crystal diamond 23

1.2. Feature of Hetero-epitaxial diamond substrate 26

1.2.1. Defect density 28

1.2.2. Off-axis substrates for quality improvement 30

1.3. Recent status of Diamond device 33

1.4. Issues of conventional boron-doped diamond FET 36

1.5. My approach 42

1.6. Experimental equipment 44

1.6.1. Microwave plasma chemical vapor deposition 44

1.6.2. Device fabrication equipment 45

1.6.3. Electronical characteristic measurement tools 47

1.7. Reference 50

Chapter 2. Boron-doped diamond grown on off-axis hetero-epitaxial diamond substrate 53

2.1. Introduction 53

2.2. Homo-epitaxial diamond grown on misoriented angle hetero-epitaxial substrate 53

2.2.1. Experimental method 54

2.2.2. Homo-epitaxial diamond growth process 55

2.3. Characteristics of grown diamond on the misoriented homo-epitaxial diamond 57

2.3.1. Surface morphologies of diamond substrate and growth layer 57

2.4. Boron doped diamond grown on 7° off-axis hetero-epitaxial substrate 61

2.4.1. Experimental method 61

2.4.2. Growth & fabrication process 61

2.5. Characteristics of difference boron doped at 7° off-axis diamond 64

2.5.1. Surface morphologies of diamond substrate and growth layer 64

2.5.2. HT-Hall measurement characteristics of boron-doped diamond 68

2.6. Summary 73

2.7. Reference 75

Chapter 3. Boron-doped diamond MOSFET fabricated on hetero-epitaxial diamond substrate 77

3.1. Introduction 77

3.2. Experimental method 79

3.2.1. Growth process of boron-doped MOSFET 79

3.2.2. Device fabrication process of boron-doped MOSFET 84

3.3. Characteristics of MOSFET on the homo-epitaxial diamond substrate 89

3.3.1. HT-Hall measurement characteristics of boron-doped diamond 89

3.3.2. I-V Curve depending on the transmission line model 92

3.3.3. I-V Characteristics of boron-doped MOSFET 96

3.3.4. C-V characteristics of boron-doped MOSFET 101

3.3.5. Breakdown voltage of boron-doped MOSFET 104

3.4. Benchmark for Ron and breakdown voltage characteristics 107

3.5. Summary 111

3.6. Reference 113

CONCLUSION 117

RESEARCH ACHIEVEMENTS 120

ABSTRACT (KOREAN) 122

List of Tables 9

Table 1.1. Comparison of the semiconductor properties 22

Table 1.2. The type of Single crystal diamond growth 24

Table 1.3. Comparison of H-termination and boron doped FET feature 35

Table 1.4. SBH of Metal-semiconductor contact and Metal-oxide-semiconductor... 40

Table 2.1. Detailed growth condition of each off-axis sample 56

Table 2.2. Detailed growth condition of each sample 63

Table 3.1. Detailed about P- /P+ growth condition 83

Table 3.2. Comparison of our boron-doped MOSFET with the previously... 110

Table 3.3. Comparison previous study in TUK with this study 110

List of Figures 10

Fig 1.1. BFOM drawn on a log-log specific on-resistance versus... 20

Fig 1.2. Various applications of power conversion systems in future 20

Fig 1.3. Application properties in current versus operation voltage about... 22

Fig 1.4. (a) High pressure high temperature (HPHT) equipment, (b) System... 25

Fig 1.5. (a) Mechanism of Chemical Vapor Deposition system, (b) System of... 25

Fig 1.6. Device yield depending of the defect density with chip size 27

Fig 1.7. Procedure of free-standing hetero-epitaxial diamond on Ir... 27

Fig 1.8. Device structure dependence on defect density 29

Fig 1.9. X-ray rocking curve (XRC) FWHM values for diamond (004) and... 31

Fig 1.10. Growth mechanism depending of misoriented angle 32

Fig 1.11. Comparison of dopant energy levels between silicon and diamond 35

Fig 1.12. Mechanism of two-dimensional hole gas (2DHG) formation on... 35

Fig 1.13. Electrical characteristics of previously developed boron-doped... 37

Fig 1.14. Electrical behavior of boron doped concentration 40

Fig 1.15. Tunneling contact mechanism via selectively doped p⁺ layer 41

Fig 1.16. Comparison between previous MESFET and this work's MOSFET:... 43

Fig 1.17. Nirim-type microwave plasma chemical vapor deposition system... 44

Fig 1.18. E-beam evaporator system (INFOVION) 45

Fig 1.19. Atomic layer deposition (NCD tech, Lucida M300PL-O system) 45

Fig 1.20. Inductively coupled plasma etcher (STS, multiplex ICP system) 45

Fig 1.21. Mask aligner (MIDAS, MDA-400M system) 45

Fig 1.22. Infrared thermometer (Chino Corp., IR-CAS system) 47

Fig 1.23. Optical Microscope (OM, Nikon LV-150 system) 47

Fig 1.24. Atomic force microscopy (AFM, Park systems, XE-7 system) 47

Fig 1.25. Triple axis high resolution X-ray diffraction (HR-XRD,... 47

Fig 1.26. Hall effect measurement (Lake shore Cryotronics, 8400 Sesries HMS) 48

Fig 1.27. Scanning Electron Microscope (SEM, Hitachi SU5000) 48

Fig 1.28. Raman spectroscopy (WEVE) 48

Fig 1.29. Power semiconductor analyzer (KEYSIGHT, B1505A) 48

Fig 2.1. Schematic of Homo-epitaxy growth diamond on off-axis... 56

Fig 2.2. (a) Optical microscopy and (b) atomic force microscopy images of... 59

Fig 2.3. X-ray rocking curve of the Hetero-epitaxial boron-doped diamond... 60

Fig 2.4. Raman spectra of homo-epitaxial grown diamond with different... 60

Fig 2.5. Schematic of (a) boron-doped diamond layer growth and (b) Hall... 63

Fig 2.6. (a) Optical microscopy and (b) atomic force microscopy images of... 65

Fig 2.7. X-ray rocking curve of the Hetero-epitaxial boron-doped diamond... 67

Fig 2.8. Raman spectra of homo-epitaxial grown diamond with different... 67

Fig 2.9. HT-Hall results about (a) Temperature dependence of resistivity... 70

Fig 2.10. Extracted ionization energy versus doping level, overlaid with... 71

Fig 2.11. HT-Hall result about Hole mobility as a function of temperature... 72

Fig 3.1. OM (x 500) Image of bare substrate and grown diamond 82

Fig 3.2. AFM (5 x 5um2) Image of bare substrate and grown diamond 82

Fig 3.3. SEM Image of the UID-grown channel layer (p⁻) and selectively... 83

Fig 3.4. SiO₂ film was deposited on the diamond surface and the C-Si... 87

Fig 3.5. The OM Image of fabricated boron-doped MOSFET device 87

Fig 3.6. Schematic of Fabrication process of boron-doped MOSFET 88

Fig 3.7. Temperature-dependent (a) resistivity, (b) hole concentration, and... 90

Fig 3.8. Arrhenius plot of hole concentration vs. inverse temperature... 91

Fig 3.9. Schematic diagram of the TLM pattern layout used for evaluating... 94

Fig 3.10. I-V curves depending on the Transmission line model at p⁻/p⁺ 94

Fig 3.11. Transfer and gate leakage characteristics for (a) Lgd＝15μm...[이미지참조] 98

Fig 3.12. Family curve of boron-doped MOSFET, (a) Lgd＝15μm, (b) Lgd＝...[이미지참조] 100

Fig 3.13. C-V, G²-V characteristics for the boron-doped MOS capacitors,... 103

Fig 3.14. Breakdown voltage when the Vgₛ＝20V which is off state, (a)...[이미지참조] 106

Fig 3.15. Vbᵣ-Lgd characteristic with difference of Lgd[이미지참조] 106

Fig 3.16. Benchmarks for RₒₙVbᵣ relationship of the current study...[이미지참조] 109

초록보기

 본 연구에서는 7° 오프축 이종 성장 다이아몬드 기판 위에 보론 도핑 다이아몬드 MOSFET를 최초로 구현하였다. 소자는 UID 기반의 p- 채널과 선택적 영역 성장(SAG)을 통한 p+ 접촉층, 그리고 30 nm 두께의 Al₂O₃ 게이트 절연막으로 구성되어 있다. 이러한 구조를 통해 1.12 × 10³ Ω·cm²의 낮은 온 저항(Rₒₙ)과 안정적인 게이트 제어, 낮은 누설전류 특성을 확보하였다. C-V 및 I-V 측정을 통해 정전용량 제어 및 캐리어 주입 특성이 검증되었다. 비록 이종 기판의 높은 전위결함 밀도가 존재하지만, 소자는 동종 성장의 다이아몬드 기판 기반의 소자와 유사한 파괴 전압 특성을 보였다. 이는 고각도의 오프축을 가진 이종성장 다이아몬드 기판을 활용한 전력 소자 개발 가능성을 시사하며, 향후 고전압·고온 반도체 소자 응용을 위한 확장 가능성을 보여준다.

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