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The growth of thick GaN film on sapphire substrate by using ZnO buffer layer  |
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Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers  |
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The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering  |
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The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering  |
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X. Wang, Y. Tomita, O.H. Roh, M. Ohsugi, S.B. Che, T. Ishtani and A. Yoshikawa, “Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy”, Appl. Phys. Lett. 86 (2005) 011921. |
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Growth of Polarity-Controlled ZnO Films on (0001) Al2O3  |
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Effects of oxygen plasma condition on MBE growth of ZnO  |
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