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The optical and structural properties of nonpolar and semipolar InGaN/GaN quantum wells (QWs) grownon planar sapphire substrates and patterned sapphire substrates (PSSs) were investigated in order to understandthe effect of defects on the luminescence. By introducing the PSS technique, surface morphological featureswere varied in number and size, and the defect density was significantly reduced by the PSS patterns, whichresulted in the formation of low-defect regions. The photoluminescence (PL) analyses of nonpolar and semipolarQWs samples revealed that the semipolar (1122) QWs, which had better optical performance and higherIn incorporation, are more suitable for application to long-wavelength emitters in the green-red spectral rangeand beyond. Moreover, particularly in the semipolar QWs, we could observe that the optical properties wereenhanced by the decrease in defect density. It was also noted that In incorporation was increased in thehigh-defect regions and in the regions where arrowhead-like features existed.

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