We report on the growth of InGaN height-controlled quantum dots (HCQDs) and the fabrication of light-emitting diodes (LEDs). InGaN HCQDs were grown by alternately depositing In0.43Ga0.57N QDs and In0.2Ga0.8N spacer layers on a seed In0.43Ga0.57N QD layer by using a metal-organic chemical vapor deposition system. The photoluminescence (PL) and the electroluminescence (EL)emission peaks of the InGaN HCQDs were red-shifted with increasing number of depositions. This indicates that the height of the InGaN HCQDs can be controlled by the number of deposition cycles of the In0.43Ga0.57N/In0.2Ga0.8N layers because the thin In0.2Ga0.8N spacer layer allowed electrical coupling between the vertically-stacked QDs. As the input current increases, the EL emission peak of the InGaN HCQD LED was blue-shifted, and the width of the EL peak increased, indicating a negligible piezoelectric-field-induced quantum-confined Stark effect in the InGaN HCQDs.
In Su Jung ; Gun Uk Kang ; Dong Hyun An ; Garam Hahn ; Joon Sun Kang ; Bong Hwan Hong ; Hong Suk Chang ; Hee Joong Yim ; Geun-Beom Kim ; Yeunsoo Park ; Tea Gun Yang ; Jun Dong Cho ; Key Ho Kwon
Changbum Kim ; Jong Chel Yoon ; Seung-nam Kim ; Myong-jin Kim ; Hee Seob Kim ; Chun Kil Ryu ; Chae-soon Lee ; In Deuk Seo ; Chongdo Park ; Hae Cheol Lee ; Man-soo Hong ; Jung-Yun Huang ; Yeongjin Han ; Jaehun Park ; In Soo Ko
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