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We report changes in the morphology and the composition at the interfacial regions of lowdielectric- constant SiOC(-H) films deposited on p-Si(100) substrates by using the plasma-enhanced chemical vapor deposition (PECVD) method. The investigated samples had Cu/SiOC(-H)/p- Si(100) and Cu/TaN/SiOC(-H)/p-Si(100) metal-insulator-semiconductor (MIS) structures. The structural and the compositional characteristics of these structures were analyzed by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Upon thermal annealing at 450℃ for films prepared with different radio-frequency (rf) powers, X-ray diffraction patterns revealed strong intermixing at the two interfaces of Cu/SiOC(-H)/p-Si(100) and Cu/TaN/SiOC(- H)/p-Si(100), but no sign of diffusion was observed at lower annealing temperatures. The results are discussed in terms of the roles played by Cu inter diffusion and oxidation at the SiOC(-H)/p- Si(100) interface region. The dielectric constants were measured for these as-deposited and 200 ℃-annealed MIS structures.

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참고문헌 (17건) : 자료제공( 네이버학술정보 )

참고문헌 목록에 대한 테이블로 번호, 참고문헌, 국회도서관 소장유무로 구성되어 있습니다.
번호 참고문헌 국회도서관 소장유무
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