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Contents
Characterization of an In2Se3 passivation layer for CIGS solar cells with Cd-free Zn-containing atomic-layer-deposited buffers / Suncheul Kim ; Ho Jin Lee ; Byung Tae Ahn ; Dong Hyeop Shin ; Kihwan Kim ; Jae Ho Yun 1
ABSTRACT 1
1. Introduction 1
2. Experimental 2
3. Results and Discussion 3
3.1. Optical characterization of In₂Se₃ thin film 3
3.2. Growth of In₂Se₃ on CIGS film 4
3.3. Zinc suppression in CIGS interface with an In₂Se₃ layer 6
3.4. Band structure of In₂Se₃/CIGS film 8
4. Conclusions 8
References 9
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Characterization of an In2Se3 passivation layer for CIGS solar cells with Cd-free Zn-containing atomic-layer-deposited buffers | Suncheul Kim, Ho Jin Lee, Byung Tae Ahn, Dong Hyeop Shin, Kihwan Kim, Jae Ho Yun | p. 96-105 |
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번호 | 참고문헌 | 국회도서관 소장유무 |
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1 | M. Nakamura, K. Yamaguchi, Y. Kimoto, Y. Yasaki, Cd-Free Cu(In,Ga)(Se,S)2 thin-film solar cell with record efficiency of 23.35%, IEEE J. Photovoltaics, 9, 1863-1867 (2019). | 미소장 |
2 | J. Chantana, Y. Kawano, T. Nishimura, Y. Kimoto, T. Kato, H. Sugimoto, T. Minemoto, 22%-efficient Cd-free Cu(In,Ga)(S,Se)2solar cell by all-dry process using Zn0.8Mg0.2O and Zn0.9Mg0.1O:B as buffer and transparent conductive oxide layers, Progress in Photovoltaics: Research and Applications, Appl., 28, 79-89(2020). | 미소장 |
3 | J. Chantana, Y. Kawano, T. Njshmura, Y. Kimoto, T. Kato, H. Sugimoto, T. Minemoto, Transparent electrode and buffer layer combination for reducing carrier recombination and optical loss realizing over a 22%-efficient Cd-free alkalinetreated Cu(In,Ga)(S,Se)2 solar cell by the all-dry process, ACS Applied Materials and Interfaces, 2, 22298-22307 (2020). | 미소장 |
4 | S. Sinha, D. K. Nandi, P. S. Pawar, S. H. Kim, J. Heo, A review on atomic layer deposited buffer layers for Cu(In,Ga)Se2(CIGS) thin film solar cells: Past, present, and future, Solar Energy, 290, 515-537 (2020). | 미소장 |
5 | W. Witte, D. Hariskos, A. Eicke, R. Menner, O. Kiowski, M. Powalla, Impact of annealing on Cu(In,Ga)Se2 solar cells with Zn(O,S)/(Zn,Mg)O buffers, Thin Solid Films, 535, 180-183(2013). | 미소장 |
6 | J. Lindahl, U. Zimmermann, P. Szaniawski, T. Torndahl, A. Hultqvist, P. Salome, C. Platzer-Bjorkman, M. Edoff, Inline Cu(In,Ga)Se2 co-evaporation for high-efficiency solar cells and modules, IEEE J. Photovoltaics, 3, 1100-1105 (2013). | 미소장 |
7 | K. H. Kim, K. H. Yoon, J. H. Yun, B. T. Ahn, Effects of Se flux on the microstructure of Cu(In,Ga)Se2 thin film deposited by a three-stage co-evaporation process. Electrochem. Solid State Letters, 9, A382-A385 (2006). | 미소장 |
8 | S. Nishiwaki, T. Satoh, Y. Hashimoto, S. I. Shimakawa, S, Hayashi, T. Negami, T. Wada, Preparation of Zn doped Cu(In,Ga)Se2 thin films by physical vapor deposition for solar cells, Solar Energy Materials and Solar Cells, 77, 359-368(2003). | 미소장 |
9 | M. Sugiyama, A. Kinoshita, A. Miyama, H. Nakanishi, S. F. Chichibu, Formation of Zn-doped CuInSe2 films by thermal annealing using dimethylzinc, J. Crystal Growth, 310, 794-797(2008). | 미소장 |
10 | C. S. Lee, S. Kim, E. A. Al-Ammar, H. S. Kwon, B. T. Ahn, Effects of Zn diffusion from (Zn,Mg)O buffer to CIGS film on the performance of Cd-free Cu(In,Ga)Se solar cells, ECS J. Solid State Science and Technology, 3, Q99-Q103 (2014). | 미소장 |
11 | E. Handick, P. Reinhard. J. H. Alsmeier, Leonard Kohler, Fabian Pianezzi, S. Krause, M. Gorgoi, E. Ikenaga, N. Koch, R. G. Wilks, S. Buecheler, A. N. Tiwari, M. Bar, Potassium postdeposition treatment-induced band gap widening at Cu(In,Ga)Se2 surfaces - reason for performance leap?, ACS Applied Materials and Interfaces, 7, 27414-27420 (2015). | 미소장 |
12 | P. Reinhard, B. Bissig, F. Pianezzi, E. Avancini, H. Hagendorfer, D. Keller, P. Fuchs, M. Dobeli, C. Vigo, P. Crivelli, S. Nishiwaki, S. Buecheler, A. N. Tiwari, Features of KF and NaF postdeposition treatments of Cu(In,Ga)Se2 absorbers for high efficiency thin film solar cells, Chemistry of Materials, 27, 5755-5764 (2015). | 미소장 |
13 | Y. M. Shin, C. S. Lee, D. H. Shin, H. S. kwon, B. G. Park, B. T. Ahn, Surface modification of CIGS film by annealing and its effect on the band structure and photovoltaic properties of CIGS solar cells, Current Applied Physics. 15, 18-24 (2015). | 미소장 |
14 | C. H. Ho, Y. C. Chen, Thickness-tunable band gap modulation in γ-In2Se3, RSC Advances, 3, 24896-24899 (2013). | 미소장 |
15 | D. Y. Lyu, T. Y. Chang, S. M. Lan, T. N. Yang, C. C. Chiang, C. L. Chen, H. P. Chiang, Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence, J. Alloys and Compounds, 499,104-107 (2010). | 미소장 |
16 | D. Y. Lee, J. H. Yun, K. H. Yoon, B. T. Ahn, Characterization of Cu-poor surface on Cu-rich CuInSe2 film prepared by evaporating binary selenide compounds and its effect on solar efficiency, Thin Solid Films, 410, 171-176 (2002). | 미소장 |
17 | S. C. Kim, Y. M. Ko, S. T. Kim, Y. W. Choi, J. K. Park, B. T. Ahn, Reduction of point defects and Cu surface composition in Cu(In,Ga)Se2 film by Se annealing with a NaF overlayer at intermediate temperatures, Current Applied Physics, 17, 820-828(2017). | 미소장 |
18 | S. T. Kim, L. Larina, J. H. Yun, B. Shin, B. T. Ahn, Surface passivation and point defect control in Cu(In,Ga)Se2 films with a Na2S post deposition treatment for higher than 19% CIGS cell performance, Sustainable Energy Fuels, 3, 709 (2019). | 미소장 |
19 | S. C. Kim, S. T. Kim, B. T. Ahn, Characterization of atomic-layer deposited ZnSnO buffer layer for 18%-efficiency Cu(In,Ga)Se2solar cells, Current Photovoltaic Research, 3, 54-60 (2015). | 미소장 |
20 | A. Loubat, S. Béchu, M.Bouttemy, J. Vigneron, D. Lincot, J. Guillemoles, A. Etcheberry, Cu depletion on Cu(In,Ga)Se2surfaces investigated by chemical engineering: An x-ray photoelectron spectroscopy approach, Citation: J. Vacuum Science & Technology A, 37, 041201 (2019). | 미소장 |
21 | C. H. De Groot, J. S. Moodera, Growth and characterization of a novel In2Se3 structure, J. Applied Physics, 89, 4336-4340(2001). | 미소장 |
22 | J. Weszka, Ph. Danier, A. Burian, A. M. Burian, A. T. Nguyen, Raman scattering in In2Se3 and InSe2 amorphous films, J. Non-Crystalline Solids, 265, 98-104 (2000). | 미소장 |
23 | J. Krustok, H. Collan, K. Hjelt, Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy?, J. Applied Physics., 81, 1442-1445 (1997). | 미소장 |
24 | T. Schmidt, K. Lischka, W. Zulehner, Excitation-power dependence of the near-band-edge photoluminescence of semiconductors, Physical Review B, 45, 8989-8994 (1992). | 미소장 |
25 | T. Unold and L. Gütay, Photoluminescence Analysis of Thin‐Film Solar Cells, Advanced Characterization Techniques for Thin Film Solar Cells, 151-175 (2011). | 미소장 |
26 | T. Ohtsuka, T. Okamoto, A. Yamada, M. Konagai, Photoluminescence study of γ-In2Se3 epitaxial films grown by molecular beam epitaxy, J. Luminescence, 87-89, 293-295 (2000). | 미소장 |
27 | W. Witte, R. Kniese, M. Powalla, Raman investigations of Cu(In,Ga)Se2 thin films with various copper contents, Thin Solid Films, 517, 867-869 (2008). | 미소장 |
28 | R. Caballero, C. A. Kaufmann, V. Efimova, R. Rissom, V. Hoffmann, H. W. Schock, Investigation of Cu(In,Ga)Se2 thinfilm formation during the multi‐stage co‐evaporation process, Progress in Photovoltaics: Research and Applications, 21, 30-46 (2013). | 미소장 |
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