대표어
한국학술지인용색인(NRF)
권호기사보기
| 기사명 | 저자명 | 페이지 | 원문 | 기사목차 |
|---|
국회도서관 홈으로
정보검색
소장정보 검색
결과 내 검색
동의어 포함
초록보기
The purpose of this study is to perform radiation monitoring by acquiring gamma images and real-time optical images for 99mTc vial source using charge couple device (CCD) cameras equipped with the proposed compact gamma camera. The compact "In fusion environments, large scales of helium (He) atoms are produced by a radical transformation along with structural damage in structural materials, resulting in material swelling and degradation of physical properties. To understand its irradiation effects, this paper investigates the stability, electronic structure, energetics, charge density distribution, PDOS and TDOS, and diffusion processes of He impurities in 6H-SiC materials. The formation energy indicates that a stable, favorable position for interstitial He is the HR site with the lowest energy of 2.40 eV. In terms of vacancy, the He atom initially prefers to substitute at pre-existing Si vacancy than C vacancy due to lower substitution energy. The minimum energy paths (MEPs) with migration energy barriers are also calculated for He impurity by interstitial and vacancy-mediated diffusion. Based on its calculated energy barriers, the most possible diffusion path includes the exchange of interstitial and vacancy sites with effective migration energies ranging from 0.101 eV to 1.0 eV. Our calculation provides a better understanding of the stabilization and diffusion behaviors of He impurities in 6H-SiC materials.
권호기사
참고문헌 (47건) : 자료제공( 네이버학술정보 )
| 번호 | 참고문헌 | 국회도서관 소장유무 |
|---|---|---|
| 1 | The Origin and Consequences of Radial Helium Profiles in Fast Reactor Cladding | 미소장 |
| 2 | Displacement damage in silicon carbide irradiated in fission reactors | 미소장 |
| 3 | He–vacancy interaction and multiple He trapping in small void of silicon carbide | 미소장 |
| 4 | Tritium permeation behavior in SiC/SiC composites | 미소장 |
| 5 | Synergetic effect of H and He with vacancy in vanadium solid from first-principles simulations | 미소장 |
| 6 | Generalized Gradient Approximation Made Simple | 미소장 |
| 7 | Thermophysical and mechanical properties of near-stoichiometric fiber CVI SiC/SiC composites after neutron irradiation at elevated temperatures | 미소장 |
| 8 | Helium-bubble formation behavior of SiCf/SiC composites after helium implantation | 미소장 |
| 9 | Issues and advances in SiCf/SiC composites development for fusion reactors | 미소장 |
| 10 | Microstructural evolution of helium-implanted α-SiC | 미소장 |
| 11 | Interstitial hydrogen in cubic and hexagonal SiC | 미소장 |
| 12 | Current status and critical issues for development of SiC composites for fusion applications | 미소장 |
| 13 | First-principles study of the behavior of O, N and C impurities in vanadium solids | 미소장 |
| 14 | Amorphization and recrystallization of covalent tetrahedral networks | 미소장 |
| 15 | Effects of fast-neutron irradiation on pyrolytic silicon carbide | 미소장 |
| 16 | The challenge of developing structural materials for fusion power systems | 미소장 |
| 17 | Swelling and stacking fault formation in helium implanted SiC | 미소장 |
| 18 | Special points for Brillouin-zone integrations | 미소장 |
| 19 | The effect of irradiation on the stability and properties of monolithic silicon carbide and SiCf/SiC composites up to 25 dpa | 미소장 |
| 20 | High-precision determination of atomic positions in crystals: The case of |
미소장 |
| 21 | High performance computational chemistry: An overview of NWChem a distributed parallel application | 미소장 |
| 22 | Experimental location of helium atoms in 6H–SiC crystal lattice after implantation and after annealing at 400 °C | 미소장 |
| 23 | An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC | 미소장 |
| 24 | Vacancy trapping mechanism for multiple hydrogen and helium in beryllium: a first-principles study | 미소장 |
| 25 | Theoretical study of helium insertion and diffusion in 3C-SiC | 미소장 |
| 26 | A comparison of defects in helium implanted α- and β-SiC | 미소장 |
| 27 | Retention and diffusion of H, He, O, C impurities in Be | 미소장 |
| 28 | Formation of bubbles by high dose He implantation in 4H–SiC | 미소장 |
| 29 | Gas permeability of SiC/SiC composites as fusion reactor material | 미소장 |
| 30 | First principles calculation of noble gas atoms properties in 3C–SiC | 미소장 |
| 31 | Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation | 미소장 |
| 32 | One picture says it all—high-pressure cells for neutron Laue diffraction on VIVALDI | 미소장 |
| 33 | He-induced vacancy formation in bcc Fe solid from first-principles simulation | 미소장 |
| 34 | Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set | 미소장 |
| 35 | Helium implantation defects in SiC studied by thermal helium desorption spectrometry | 미소장 |
| 36 | Fusion power: a challenge for materials science | 미소장 |
| 37 | A climbing image nudged elastic band method for finding saddle points and minimum energy paths | 미소장 |
| 38 | Diffusion of helium in FCC metals | 미소장 |
| 39 | Fission Product Release Behavior of Individual Coated Fuel Particles for High-Temperature Gas-Cooled Reactors | 미소장 |
| 40 | Interaction between helium and intrinsic point defects in 3C-SiC single crystal | 미소장 |
| 41 | First-principles investigation on stability and diffusion mechanism of helium impurities in 4H-SiC | 미소장 |
| 42 | The stability of vacancy clusters and their effect on helium behaviors in 3C-SiC | 미소장 |
| 43 | Ab initio study of interstitial helium clusters in 3C-SiC | 미소장 |
| 44 | Silicon carbide and its composites for nuclear applications – Historical overview | 미소장 |
| 45 | Review of Silicon Carbide Processing for Power MOSFET | 미소장 |
| 46 | Diffusion and retention of helium in graphite and silicon carbide | 미소장 |
| 47 | First-principles study of native point defects and diffusion behaviors of helium in zirconium carbide | 미소장 |
MARC 보기
오류 데이터 정정요청
*표시는 필수 입력사항입니다.
알림톡 발송
| 전화번호 |
|---|
개인정보 수정 바로가기
연속간행물 권호 선택
우편복사 안내
- ◾ 도서관을 방문하지 못할 경우 인터넷, 팩스 등으로 자료 복사를 신청하고, 복사물을 우편·팩스 등으로 제공받는 서비스
- ◾ 대상자료: 일반도서, 연속간행물 및 학위논문
- ※ 고서, 고잡지, 훼손될 우려가 있는 자료, 마이크로폼 자료 및 신문 등 제외
- ◾ 신청 책수: 1인 5책 이하(1일 기준)
- ◾ 신청 절차: 자료 검색 → 우편복사 목록담기 → 복사 범위 입력 → 우편복사 주문서 입력 → 접수 및 확인
- ※ 저작권법에 의거하여 부분 복사(전체 페이지 수의 1/3 범위 이내)만 가능
- ◾ 복사 범위 입력 예시: (연속 페이지) 1-30, (부분 페이지) 25, 30-40
| 번호 | 발행일자 | 권호명 | 제본정보 | 자료실 | 원문 | 신청 페이지 |
|---|
도서위치안내(서울관)
도서위치안내: / 서가번호:
0
확인
우편복사 목록담기를 완료하였습니다.
내서재에 담기
새로운 서재
*표시는 필수 입력사항입니다.
저장
저장 되었습니다.