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We investigate strategies to enhance the power-conversion efficiency of Cu(In,Ga)Se2 (CIGS) thinfilm solar cells through optoelectrical simulations. Our analysis of the constant-gallium-composition ratio (GGI) reveals that increasing the GGI value reduces light absorption, leading to a decrease in shortcircuit current density (JSC), while open-circuit voltage (VOC) increases due to a higher quasi-Fermi-level splitting. To address this trade-off, we introduce a diffraction-grating rear passivation structure, which improves JSC and VOC by increasing optical reflectivity and suppressing carrier recombination losses at the back contact of CIGS with GGI of 0.15. Furthermore, we optimize the GGI gradient to improve solar-cell performance. Incorporating a rear GGI gradient strengthens the electric field at the rear CIGS, improving charge-carrier transport and reducing recombination losses, thereby increasing efficiency to 20.3%. Additional optimization of the front GGI gradient reduces the energy barrier at the CIGS/CdS interface, achieving a maximum efficiency of 23.2%. These findings underscore the critical role of GGI engineering and passivation layers in advancing high-efficiency CIGS thin-film solar cells.
We investigate strategies to enhance the power-conversion efficiency of Cu(In,Ga)Se2 (CIGS) thinfilm solar cells through optoelectrical simulations. Our analysis of the constant-gallium-composition ratio (GGI) reveals that increasing the GGI value reduces light absorption, leading to a decrease in shortcircuit current density (JSC), while open-circuit voltage (VOC) increases due to a higher quasi-Fermi-level splitting. To address this trade-off, we introduce a diffraction-grating rear passivation structure, which improves JSC and VOC by increasing optical reflectivity and suppressing carrier recombination losses at the back contact of CIGS with GGI of 0.15. Furthermore, we optimize the GGI gradient to improve solar-cell performance. Incorporating a rear GGI gradient strengthens the electric field at the rear CIGS, improving charge-carrier transport and reducing recombination losses, thereby increasing efficiency to 20.3%. Additional optimization of the front GGI gradient reduces the energy barrier at the CIGS/CdS interface, achieving a maximum efficiency of 23.2%. These findings underscore the critical role of GGI engineering and passivation layers in advancing high-efficiency CIGS thin-film solar cells.| 기사명 | 저자명 | 페이지 | 원문 | 목차 |
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