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Title Page

Abstract

Contents

Chapter 1. Introduction 18

References 23

Chapter 2. Literature survey and theoretical background 25

2.1. Theoretical study for growing surfaces 25

2.1.1. Fractal concepts for growing surfaces 25

2.1.2. Random deposition and KPZ models 26

2.1.3. Growth model for MBE process 32

2.2. Synchrotron radiation 37

2.3. X-rays scattering theory 42

2.3.1. Classical scattering by a free electron 42

2.3.2. Fresnel reflectivity of electromagnetic wave 44

2.4. X-ray reflectivity theory 50

2.4.1. X-ray reflectivity based on Born approximation 50

2.4.2. Distorted wave Born approximation for reflectivity 53

2.5. Surface x-ray diffraction 56

References 61

Chapter 3. Si 7×7 reconstruction surface and Ba deposition on Si 7×7 surface 63

3.1. Introduction 63

3.2. UHV surface x-ray scattering chamber and experimental detail 65

3.3. Results and discussion 68

3.3.1. Si 7×7 surface 68

3.3.2. Si(111) 3×1-Ba surface 70

3.3.3. Disordered Ba phase on Si(111)-7×7 surface at RT 71

3.4. Conclusion 72

REFERENCES 81

Chapter 4. Evolution of surfave morphology during Fe/Si(111) and Fe/Si(001) heteroepitaxy 83

4.1. Introduction 83

4.2. Experimental detail 84

4.3. Results and discussion 85

4.4. Conclusion 89

References 97

Chapter 5. Dependence of Si/Si growth on various initial surface conditions 98

5.1. Introduction 98

5.2. Experimental details 99

5.3. Results and discussion 101

5.3.1. Growth at 400℃ on a surface cleaned by the RCA method 102

5.3.2. Growth at RT on a surface cleaned by the RCA method 104

5.3.3. Growth at 400℃ on a flashed and initially rough surface 106

5.3.4. Growth at 400℃ on a flashed and initially smooth surface 108

5.4. Conclusion 109

References 124

Chapter 6. Conclusion 126

Chapter 7. Summary (KOREAN) 128

Curriculum Vitae 132

Publication List 135

List of Tables

Table 2.1. The properties of various synchrotrons. 41

List of Figures

Figure 1.1. (a) A heteroepitaxial film consisting of a GexSi1-x film and a Si single crystal. (b) A cross section of a Si epitaxial layer with dopants as grown on a Si substrate.(이미지참조) 22

Figure 2.1. Various self-similar Fractals (a) Sierpinski gasket (b) Vicseck fractal obtained by different methods 27

Figure 2.2. A self-affine object. 28

Figure 2.3. A schematic diagram of RD model. 29

Figure 2.4. The origin of the nonlinear term in KPZ equation. 30

Figure 2.5. Geographical interpretation of the different linear and nonlinear terms appearing in the continuum growth equation 34

Figure 2.6. The relaxation mechanism of Wolf-Villian and Das Sarma-Tamborenea models. 36

Figure 2.7. Conventional x-ray generators (a) Rotating anode x-ray generator (b) Tube x-ray generator 38

Figure 2.8. A schematic diagram for a general storage ring 40

Figure 2.9. Geometry of emission of synchrotron radiation 41

Figure 2.10. Classical scattering of an unpolarized primary beam by a single free electron at the origin. 43

Figure 2.11. (a) Reflection and refraction with polarization perpendicular to the plane of incidence (b) Reflection and refraction with polarization parallet to the plane of incidence (c) In case of x-rays, the dielectric constant of a media is less than the value of... 45

Figure 2.12. Electromagnetic waves in a multi-layer system 48

Figure 2.13. (a) X-ray scattering at a rough surface (b) In a thin film structure, the height correlation between layer 1 and 2(C₁₂) is considered. 49

Figure 2.14. In DEBA, rough regions are considered as a perturbation to a smooth surface. 49

Figure 2.15. (a) Line pattern for an isolated monolayer (b) Spot pattern for a 3-D crystal (c) Diffraction pattern along crystal truncation rods (2D lines + 3D spots) 59

Figure 2.16. Patterson function (a) and difference Fourier map (b) for InSb(111)2×2 obtained by J. Bohr et al. in 1985. 60

Figure 3.1. Dimer-Adatom Stacking Fault (DAS) model for the Si(111)-7×7 surface. 73

Figure 3.2. A drawing of UHV chamber and x-ray diffractometer 74

Figure 3.3. A schematic diagram of S2D2 2+2 x-ray diffraction geometry 75

Figure 3.4. (a) A schematic diagram of Si(111) plane and in-plane peak positions (b) A diagram of peak positions on Si(111)-7×7 surface. 76

Figure 3.5. The x-ray scattering measurement results about Si(111) 7×7 surface. 77

Figure 3.6. The in-plane fractional-order reflections collected from the Ba-induced Si(111)-3×1 surface. 78

Figure 3.7. The structure model for the Ba/Si(111)-3×1. 79

Figure 3.8. The intensities of three fractional-order reflections and integral-order (1, 0) peak are measured with increasing coverage of Ba deposited at RT. 80

Figure 4.1. A schematic diagram for X2A beam line at National Synchrotron Light Source (NSLS) and a UHV surface x-ray scattering chamber 91

Figure 4.2. The scattering geometry for (a) Fe(111)/Si(111) and (b) Fe(110)/Si(001). 92

Figure 4.3. The reflectivity curves during growth of Fe/Si(111). 93

Figure 4.4. The reflectivity curves during growth of Fe/Si(111). 94

Figure 4.5. (a, b) The evolution of surface roughness during the growth obtained from the fits of the data shown in Fig. 4.3 and Fig. 4.4. (c, d) The evolution of the surface roughness plotted in a log-log scale. 95

Figure 4.6. (a) The scattering profile of the Fe(011) peak located 35.36˚ off from the surface normal. The scanning path was along the surface normal as represented by the dotted line.... 96

Figure 5.1. A schematic diagram for a sample and an evaporator of UHV x-ray scattering chamber 111

Figure 5.2. Growth temperature is 400℃ and the surface was cleaned by RCA method. 112

Figure 5.3. (a, b) The evolution of the roughness during growth temperature at 400℃ on a surface cleaned by RCA method. 113

Figure 5.4. (a) TEM images measured after deposition at 400℃ on a surface cleaned by RCA method. The initial 300Å is crystalline structure and the amorphous layer was found above crystal layer.... 114

Figure 5.5. The silicon atoms were deposited at RT on a Si(111) surface cleaned by RCA method. 115

Figure 5.6. (a, b) The evolution of the roughness during deposition at RT on a surface cleaned by RCA method. 116

Figure 5.7. (a) The TEM image measured after deposition at RT on a surface cleaned by RCA method. It shows that the over layer film is amorphous. In the amorphous matrix, nano crystals are found in the position of 100Å to 210Å thickness.... 117

Figure 5.8. Si atoms were deposited at 400℃ on a flashed rough surface. 118

Figure 5.9. (a, b) The evolution of the roughness during deposition at 400℃ on a flashed rough surface. 119

Figure 5.10. (a) TEM image was measured after deposition at 400℃ on a flashed rough surface, and it shows that the initial 200Å of the film is amorphous while the upper part of the film is crystalline.... 120

Figure 5.11. Reflectivity curves were measured during deposition at 400℃ on a smooth surface. 121

Figure 5.12. (a, b) The evolution of the surface roughness during deposition at 400℃ on a flashed smooth surface. The surface morphology maintained the initial condition until 450Å, and then the roughness increased as ∼t0.31±0.01....(이미지참조) 122

Figure 5.13. TEM and TED images were obtained after deposition at 400℃ on a flashed smooth surface. 123

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