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Title Page

Abstract

Contents

Chapter 1. Introduction 17

1.1. Properties of the statistical VM generally applied for plasma-assisted processes 17

1.2. Requirements on the VM models for plasma-assisted processes 21

1.3. Process governing plasma property as a key information for the development of VM 23

1.4. Selection of the target process to develop VM for plasma-assisted processes 28

Chapter 2. Main Plasma Information (PI) Parameter: b-factor 30

2.1. Introduction to generalized form of EEDF 31

2.2. b-factor monitoring model based on OES signal analysis 34

2.3. Sensitivity of b-factor to the variation of the process plasma 39

2.3.1. Sensitivity to the metastable argon generation and stepwise ionization rate 40

2.3.2. Sensitivity to the gas mixing ratio 56

Chapter 3. Plasma Information Based VM(PI-VM) Model for Plasma Etching Process 75

3.1. Experimental setup and access of sensing data 75

3.2. Main and sub PI parameters based on the etching process reaction mechanisms 78

3.2.1. Volume reactions and the main PI, b-factor 81

3.2.2. Sheath properties and the first sub PI, q-factor 83

3.2.3. Surface reactions and the second sub PI, passivation species 99

3.3. Construction of VM components based on the PI parameters 101

3.3.1. Chemical etching term 107

3.3.2. Physical etching term 110

3.3.3. Surface passivation term 112

3.4. Performance of PI-VM model for etch rate prediction 113

3.4.1. Organization of retch-factor(이미지참조) 113

3.4.2. Evaluation of PI-VM performance by using retch-factor(이미지참조) 114

Chapter 4. Expansion of PI-VM Model for Plasma Enhanced a-Si Deposition Process 116

4.1. Experimental setup and access of sensing data 116

4.2. PI parameters based on the a-Si thin film deposition mechanism 117

4.2.1. Volume, sheath, surface reactions and PI parameters, b and q 120

4.2.2. Film quality determination mechanism and q-factor 128

4.3. Evaluation of PI-VM model to the a-Si PECVD 131

4.3.1. Organization of rdepo-factor(이미지참조) 131

4.3.2. Performance of PI-VM by using rdepo-factor(이미지참조) 132

Chapter 5. Characteristics of PI-VM for Plasma-assisted Etch-Deposition Processes 134

5.1. Characterization of the PI-VM consisting variables 134

5.1.1. Classification of the monitoring sensing variables 134

5.1.2. Characterization of the PCs 136

5.2. Application of the PI-VM for chamber to chamber (C2C) matching problem 140

Chapter 6. Conclusion 153

Bibliography 155

초록 163

List of Tables

Table 2.1. Selected second order reaction rate constants (based on Maxwellian EEDF) for electron impact... 66

Table 2.2. Selected second order reaction rate constants (based on Maxwellian EEDF) for electron impact... 67

Table 2.3. Selected second order reaction rate constants (based on Maxwellian EEDF) for neutral reactions in... 70

Table 2.4. Selected second order reaction rate constants (based on Maxwellian EEDF) for electron impact... 74

Table 2.5. Selected second order reaction rate constants (based on Maxwellian EEDF) for neutral reactions in... 74

Table 3.1. The list of monitored EES SVs after the sensitivity test. 77

Table 4.1. Error of the a-Si PECVD rate prediction by using the VM methodologies of PI-VM, PCR0, and PCRb,q.(이미지참조) 133

List of Figures

Figure 2.1. Operating region of the thermodynamic equilibrium model in terms of ηe and Te,eff.(이미지참조) 38

Figure 2.2. Schematic of the experimental setup with the OES measurement system to monitor the Ar I and the... 42

Figure 2.3. Variation of the line emission intensity ratio (ArI(811.5㎚) to ArI(750.4㎚)) in a 10-mTorr argon... 44

Figure 2.4. Variation of the EEDF shape factor b in a 10-mTorr argon plasma with the applied power obtained... 45

Figure 2.5. Measured EEDFs as functions of the applied power in a 10-mTorr argon discharge by using... 47

Figure 2.6. Plasma parameters estimated using the analyzed EEDFs as functions of the applied power. 48

Figure 2.7. Variation of the plasma parameters obtained by using OES measurements in a 20-mTorr capacitively-... 55

Figure 2.8. Measured EEDFs with variation of oxygen molar fraction in O2/Ar plasma using by (a) Langmuir... 59

Figure 2.9. Measured EEDF describing parameter with variation of oxygen molar fraction in O2/Ar plasma 60

Figure 2.10. Measured plasma parameters with variation of oxygen molar fractionin O2/Ar plasma 63

Figure 2.11. Calculated energy relaxation length of the electrons in terms of the electron energy with variation of... 65

Figure 2.12. Normalized reaction rates by the molar fraction of the composing gases at Te,eff＝5eV with variation...(이미지참조) 70

Figure 2.13. Normalized reaction rates by the molar fraction of the composing gases at Te,eff＝5eV with variation...(이미지참조) 72

Figure 2.14. Measured EEDF describing parameter with variation of oxygen molar fraction in O2/He plasma 73

Figure 3.1. The schematics of the TF(Triple-Frequency)-CCP etcher. 76

Figure 3.2. Schematic of electron impact reactions of C4F8. 82

Figure 3.3. Electron impact cross sections for (a) C4F8 and (b) C2F4. A, B, C, D, E, F, and G represent C2F4+,...(이미지참조) 83

Figure 3.4. (a) 3-dimensional plot of the sheath edge potential in the electronegative plasma as a function of the... 91

Figure 3.5. thermodynamical constraint considered solution of the sheath edge potential as a function of the... 96

Figure 3.6. Example of the solution of the sheath edge potential in the electronegative plasma at C/nenn＝0.2...(이미지참조) 97

Figure 3.7. Cumulated variance fraction with increasing number of principal components consisted by the sensing... 102

Figure 3.8. The variation of etch rates for 50 wafers measured by V-SEM images. 104

Figure 3.9. The variation of the PCs during the process of 50 wafers 105

Figure 3.10. The comparison of the PCR0 based VM result for the prediction of etch rate without the...(이미지참조) 107

Figure 3.11. The comparison of the PCRb based VM result with the consideration of the PI parameter b and the...(이미지참조) 108

Figure 3.12. The comparison of the PCRb,q based VM result with the consideration of the PI parameters b and q,...(이미지참조) 111

Figure 3.13. Correlation diagram of the measured etch rate and predicted etch rate by the PI-VM for 50 wafers. 115

Figure 3.14. The comparison of the PI-VM result and the measured etch rate for 50 wafers. 115

Figure 4.1. The schematics of the a-Si thin film deposition process including the PECVD process. 119

Figure 4.2. The structure of SiH4 molecule widely used for the PECVD processes 121

Figure 4.3. Electron impact collisional ionization cross section of H2O, O2, Al, SiH4 and fragments of SiH4. 121

Figure 4.4. Hydrogen terminations of the Si surface; Si(111):H, Si(111):SiH3,Si(100)2x1:H,... 123

Figure 4.5. Schematics of the surface diffusion model for a-Si deposition 126

Figure 4.6. Schematics of the etching model for a-Si deposition 127

Figure 4.7. Schematics of the chemical annealing model for a-Si deposition 128

Figure 4.8. The comparison of the PI-VM results and the measured deposition rate for a-Si PECVD process. 133

Figure 5.1. Evaluation of the PCs based on the classification of the sensing variables into the plasma parameters,... 138

Figure 5.2. Evaluation of the PCs based on the classification of the sensing variables into the plasma parameters,... 139

Figure 5.3. RGA intensity ratio of the residual (a) nitrogen and (b) oxygen gas, normalized by the argon intensity,... 144

Figure 5.4. b-factors of the two etchers during the etching process, measured using the OES signals. 146

Figure 5.5. EEDFs of the two etchers during the etching process, obtained from (b, Te,eff), measured by using the...(이미지참조) 147

Figure 5.6. RGA intensity ratio of the dissociated nitrogen, oxygen radicals, CrO2Cl2 species, and CrCl2 species,... 148

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