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Zinc oxide (ZnO) thin films have been grown by atomic layer deposition (ALD) on O2 plasma-treated polyethersulfone (PES) substrates. We investigated the effects of the duration of O2 plasma pretreatment from 0 to 60 min on the characteristics of ZnO thin films grown on the substrates. When the duration of plasma treatment increases, the surface roughness of PES substrate increases. X-ray diffraction (XRD) measurements reveals that there is an increasing tendency toward preferential c-axis orientation of grains in ZnO thin films with the increasing duration of plasma pretreatment. It probably results from the improved crystallinity of ZnO thin films grown on the roughened PES substrates after O2 plasma pretreatment. The roughened surface of PES substrates promote many nucleation sites leading to perpendicular c-axis growth of ZnO thin films, and therefore improve the crystallinity of ZnO thin films. The peak intensity of NBE emission around 3.0 eV decreases with increasing duration of O2 plasma pretreatment up to 30 min. Then, it rapidly increases up to 60 min. The variation of PL intensity and NBE peak position strongly depends on the crystallinity of ZnO thin films.

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참고문헌 (26건) : 자료제공( 네이버학술정보 )

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