| 1 |
High-voltage SiC and GaN power devices  |
미소장 |
| 2 |
J. K. Mun, S. B. Bae, W. J. Chang, J. W. Lim, E. S. Nam, “Global R&D Trends of GaN Electronic Devices,” ETRI Electronics and Telecommunications Trends, vol. 27, no. 1, pp. 75-85, Feb 2012. |
미소장 |
| 3 |
T. Uesugi and T. Kachi, “GaN Power Switching Devices for Automotive Applications,” CS MANTECH Conference, Tampa, Florida, May 2009. |
미소장 |
| 4 |
AlGaN/GaN HEMTs-an overview of device operation and applications  |
미소장 |
| 5 |
W. Saito, I. Omura, T. Domon, and K. Tsuda, “High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT, ”Compound Semiconductor Integrated Circuit Symposium, pp. 253-256, Nov 2006. |
미소장 |
| 6 |
Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode  |
미소장 |
| 7 |
The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate  |
미소장 |
| 8 |
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors  |
미소장 |
| 9 |
SiN x Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition  |
미소장 |
| 10 |
O. Seok, W. Ahn, Y.-S. Kim, M.-K. Han, and M.-W. Han, “3.2 kV AlGaN/GaN MIS-HEMTs Employing RF Sputtered Ga2O3 Films,” 24th Int. Symp. Power. Semicond. Dev. ICs, Bruges, Belgium, June 2012. |
미소장 |
| 11 |
IEEE Electron Device Letters Information for authors  |
미소장 |